BLF6G10L-40BRN,118 NXP Semiconductors, BLF6G10L-40BRN,118 Datasheet - Page 37

• Manufacturer Part Number: BLF6G10L-40BRN,118
• Description: TRANS LDMOS SOT1110A3/B3
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10L-40BRN,118

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: *
• Gain: 23dB
• Current Rating: 11A
• Current - Test: *
• Voltage - Test: 28V
• Power - Output: 2.5W
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

1.6.8 RF Microwave furnace application
Application diagram
Recommended products
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Function
Function
MPA (medium
Product highlight:
NXP’s 6th and 7th generation LDMOS technology together with
advanced package concepts enable best in class performing power
amplifiers. The unsurpassed ruggedness and low thermal resistance
in connection with the high intrinsic efficiency make these transistors
ideally suited for the furnace application.
amplifier)
Driver
power
Final
Final
oscillator
Type
BLF6G24-12
BLF6G24-180PN
BLF7G24L (S)-250P
Product
MMIC
CONTROLLER
MPA
SiGe:C MMIC
MMIC
2000 - 2200
2000 - 2200
2500 - 2700
frange
MHz
HPA
Package
SOT89
SOT908
SOT89
SOT908
SOT89
SOT908
P
40
50
20
L(AV)
W
isolator
Type
BGA6289
BGA6489
BGA6589
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130*
BGA7133*
27.5
27.5
n
25
%
D
17.5
16.5
GP
antenna
dB
17
Features
`
`
`
`
Excellent ruggedness
Very consistent device performance
Low thermal resistance design for unrivalled reliability
Very easy to design with
brb418
Availability
Q3 2010
Q3 2010
Q3 2010
NXP Semiconductors RF Manual 14
th
edition
39