BLF6G15L-40BRN,112 NXP Semiconductors, BLF6G15L-40BRN,112 Datasheet - Page 3

• Manufacturer Part Number: BLF6G15L-40BRN,112
• Description: TRANS LDMOS SOT1112A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G15L-40BRN,112

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: *
• Gain: 22dB
• Current Rating: 11A
• Current - Test: *
• Voltage - Test: 28V
• Power - Output: 2.5W
• Package / Case: *
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Continuous Drain Current: 11 A
• Maximum Operating Temperature: + 200 C
• Forward Transconductance Gfs (max / Min): 4.3 S
• Resistance Drain-source Rds (on): 0.25 Ohms
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
6. Characteristics
7. Application information
BLF6G15L-40BRN
Product data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Class-AB production test circuit; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1;
64 DPCH; f
V
Table 8.
Class-AB production test circuit; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1;
64 DPCH; f
unless otherwise specified.
The BLF6G15L-40BRN is capable of withstanding a load mismatch corresponding to
VSWR = 10 :1 through all phases under the following conditions: V
I
Symbol Parameter
V
V
I
I
I
I
g
R
Symbol
P
G
RL
η
ACPR
Symbol Parameter
PAR
Dq
Dq
DSS
DSX
GSS
j
DS
fs
D
(BR)DSS
GS(th)
L(AV)
DS(on)
p
= 25
in
= 330 mA; P
= 28 V; I
O
°
C per section; unless otherwise specified
output peak-to-average ratio
drain-source breakdown voltage V
gate-source threshold voltage
quiescent drain current
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
1
1
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
Characteristics
2-carrier W-CDMA RF performance
1 carrier W-CDMA PAR performance
= 1473.4 MHz; f
Dq
= 1510.9 MHz; RF performance at V
= 330 mA; T
All information provided in this document is subject to legal disclaimers.
L
= 30 W; f = 1475 MHz (CW).
Rev. 2 — 12 November 2010
case
2
= 1478.4 MHz; f
= 25
°
C; unless otherwise specified.
P
Conditions
probability on CCDF
L(AV)
sense transistor:
V
V
V
Conditions
V
main transistor:
V
V
I
D
3
GS
DS
GS
GS
DS
GS
DS
GS
V
= 2.06 A
Conditions
P
P
P
P
= 1508.4 MHz; f
= 10 W at 0.01 %
I
DS
DS
L(AV)
L(AV)
L(AV)
L(AV)
= 0 V; I
= 10 V; I
= 0 V; V
= V
= 10 V
= 11 V; V
= 10 V; I
= V
DS
= 5.1 mA; V
= 28 V
= 28 V; I
GS(th)
GS(th)
= 2.5 W
= 2.5 W
= 2.5 W
= 2.5 W
BLF6G15L-40BRN
D
DS
D
D
= 0.59 mA
+ 3.75 V;
DS
+ 3.75 V;
= 59 mA
= 2.9 A
= 28 V
Dq
= 0 V
DS
4
= 330 mA; T
= 1513.4 MHz; RF performance at
= 12 V
Min
-
19.8
10
11
-
Power LDMOS transistor
Min
5.3
DS
Min Typ Max Unit
65
1.4
280 330 380 mA
-
8.8
-
2.7
0.09 0.25 0.39 Ω
Typ
2.5
22.0
15
13
−45
case
Typ
6.0
= 28 V;
© NXP B.V. 2010. All rights reserved.
= 25
-
1.9
-
10
-
4.3
Max
-
-
-
-
−40
Max
-
°
C;
-
2.4
1.4
-
140 nA
-
Unit
dB
Unit
W
dB
dB
%
dBc
3 of 11
V
V
μA
A
S