BLF6G15L-40BRN,112 NXP Semiconductors, BLF6G15L-40BRN,112 Datasheet - Page 7

• Manufacturer Part Number: BLF6G15L-40BRN,112
• Description: TRANS LDMOS SOT1112A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G15L-40BRN,112

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: *
• Gain: 22dB
• Current Rating: 11A
• Current - Test: *
• Voltage - Test: 28V
• Power - Output: 2.5W
• Package / Case: *
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Continuous Drain Current: 11 A
• Maximum Operating Temperature: + 200 C
• Forward Transconductance Gfs (max / Min): 4.3 S
• Resistance Drain-source Rds (on): 0.25 Ohms
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
9. Package outline
Fig 6.
BLF6G15L-40BRN
Product data sheet
Flanged ceramic package; 2 mounting holes; 6 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
mm
Unit
SOT1112A
Outline
version
Package outline SOT1112A
(1)
max
nom
max
nom
min
min
H
0.183
0.148
4.65
3.76
A
U
A
2
0.045
0.035
1.14
0.89
b
A
Z
0.207
0.197
5.26
5.00
IEC
b
1
0.007
0.004
0.18
0.10
c
4
6
b
L
9.65
9.40
0.38
0.37
D
JEDEC
9.65
9.40
0.38
0.37
All information provided in this document is subject to legal disclaimers.
D
1
D
U
b
9.65
9.40
0.38
0.37
References
D
q
1
2
1
1
1
E
Rev. 2 — 12 November 2010
0
9.65
9.40
0.38
0.37
E
1
JEITA
0.045
0.035
1.14
0.89
w
F
2
scale
5
5
7
17.12
16.10
0.674
0.634
C
H
3
0.118
0.106
3.00
2.69
L
10 mm
C
F
B
p
0.130
0.115
3.30
2.92
p
w
1
0.067
0.057
1.70
1.45
Q
BLF6G15L-40BRN
A
(2)
15.24
B
0.6
q
20.45
20.19
0.805
0.795
European
projection
U
1
E
1
Power LDMOS transistor
9.91
9.65
0.39
0.38
U
2
Q
0.25
0.01
w
1
© NXP B.V. 2010. All rights reserved.
c
0.51
0.02
w
2
Issue date
09-10-12
10-02-02
E
0.235
0.225
5.97
5.72
sot1112a_po
Z
SOT1112A
64
62
64
62
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