PBR941B,215 NXP Semiconductors, PBR941B,215 Datasheet

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PBR941B,215

Manufacturer Part Number
PBR941B,215
Description
TRANSISTOR NPN UHF 50MA SOT23-3
Manufacturer
NXP Semiconductors
Datasheet
1.PBR941B215.pdf (13 pages)

Specifications of PBR941B,215

Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2.5dB @ 1GHz
Power - Max
360mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 5mA, 6V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
100
Dc Current Gain Hfe Max
200
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
50 mA
Power Dissipation
360 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-6386-2
PBR941B,215
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PBR941B
UHF wideband transistor
Preliminary specification
2001 Jan 18

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PBR941B,215 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage PBR941B UHF wideband transistor Preliminary specification M3D088 2001 Jan 18 ...

Page 2

Philips Semiconductors UHF wideband transistor FEATURES • Small size • Low noise • Low distortion • High gain • Gold metallization ensures excellent reliability. APPLICATIONS • Communication and instrumentation systems. DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT23 ...

Page 3

Philips Semiconductors UHF wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC average collector current ...

Page 4

Philips Semiconductors UHF wideband transistor CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER DC characteristics V collector-base breakdown voltage (BR)CBO V collector-emitter breakdown (BR)CEO voltage V emitter-base breakdown voltage (BR)EBO V forward base-emitter voltage BEF I collector-base ...

Page 5

Philips Semiconductors UHF wideband transistor 400 handbook, halfpage P tot (mW) 300 200 100 100 Fig.2 Power derating as a function of soldering point temperature. 0.5 handbook, halfpage C re (pF) 0.4 0.3 0.2 0 ...

Page 6

Philips Semiconductors UHF wideband transistor 20 handbook, halfpage MSG gain (dB GHz maximum unilateral power gain. UM MSG = maximum ...

Page 7

Philips Semiconductors UHF wideband transistor 4 handbook, halfpage NF (dB) 3 (1) (2) 2 (3) (4) (5) ( − ( GHz. ( 900 MHz. (2) f ...

Page 8

Philips Semiconductors UHF wideband transistor handbook, full pagewidth ° 180 GHz Ω mA ( dB. ( dB. ...

Page 9

Philips Semiconductors UHF wideband transistor handbook, full pagewidth ° 180 = 50 Ω mA Fig.14 Common emitter input reflection coefficient (s handbook, full pagewidth 180 ...

Page 10

Philips Semiconductors UHF wideband transistor handbook, full pagewidth 180 mA Fig.16 Common emitter reverse transmission coefficient (s handbook, full pagewidth ° 180 = 50 Ω ...

Page 11

Philips Semiconductors UHF wideband transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION ...

Page 12

Philips Semiconductors UHF wideband transistor DATA SHEET STATUS PRODUCT DATA SHEET STATUS STATUS Objective specification Development Preliminary specification Qualification Product specification Production Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form ...

Page 13

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + 101 ...

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