PBR941B,215 NXP Semiconductors, PBR941B,215 Datasheet - Page 10

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PBR941B,215

Manufacturer Part Number
PBR941B,215
Description
TRANSISTOR NPN UHF 50MA SOT23-3
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBR941B,215

Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2.5dB @ 1GHz
Power - Max
360mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 5mA, 6V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
100
Dc Current Gain Hfe Max
200
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
50 mA
Power Dissipation
360 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-6386-2
PBR941B,215
Philips Semiconductors
2001 Jan 18
handbook, full pagewidth
handbook, full pagewidth
UHF wideband transistor
V
V
CE
CE
= 6 V; I
= 6 V; I
C
C
= 15 mA.
= 15 mA; Z
Fig.16 Common emitter reverse transmission coefficient (s
o
= 50 Ω .
Fig.17 Common emitter output reflection coefficient (s
180
180
°
°
0.5
0
−135
+ 0.2
−135
− 0.2
135
0.4
135
°
°
°
°
0.2
0.3
+ 0.5
− 0.5
0.2
0.5
0.1
− 90
− 90
10
90
+ 1
− 1
90
1
°
°
°
3 GHz
°
1 GHz
500 MHz
200 MHz
100 MHz
2 GHz
3 GHz
2 GHz
1 GHz
2
500 MHz
− 2
+ 2
200 MHz
5
− 45
22
− 45
45
45°
); typical values.
+ 5
− 5
12
°
°
°
100 MHz
); typical values.
MGS511
MGS510
0
0
°
°
1.0
0.8
0.6
0.4
0.2
0
1.0
Preliminary specification
PBR941B

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