PBR941B,215 NXP Semiconductors, PBR941B,215 Datasheet - Page 3

• Manufacturer Part Number: PBR941B,215
• Description: TRANSISTOR NPN UHF 50MA SOT23-3
• Manufacturer: NXP Semiconductors

Specifications of PBR941B,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.5dB @ 1GHz
• Power - Max: 360mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 6V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 200
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 50 mA
• Power Dissipation: 360 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-6386-2; PBR941B,215

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. T
THERMAL CHARACTERISTICS
2001 Jan 18
V
V
V
I
I
P
T
T
R
SYMBOL
SYMBOL
C
C(AV)
stg
j
CBO
CEO
EBO
tot
th j-s
UHF wideband transistor
s
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to soldering point
PARAMETER
PARAMETER
open emitter
open base
open collector
T
s
= 60 °C; note 1
3
CONDITIONS
−
−
−
−
−
−
−65
−
Preliminary specification
MIN.
VALUE
320
PBR941B
20
10
1.5
50
50
360
+150
150
MAX.
UNIT
K/W
V
V
V
mA
mA
mW
°C
°C
UNIT