BFG505/X,235 NXP Semiconductors, BFG505/X,235 Datasheet - Page 10

• Manufacturer Part Number: BFG505/X,235
• Description: TRANS RF NPN 9GHZ SOT4
• Manufacturer: NXP Semiconductors

Specifications of BFG505/X,235

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 250
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 18 mA
• Power Dissipation: 150 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistors
V
V
Z
o
CE
CE
= 50 .
= 6 V; I
= 6 V; I
C
C
= 5 mA.
= 5 mA.
Fig.16 Common emitter reverse transmission coefficient (S
180
180
Fig.17 Common emitter output reflection coefficient (S
0.25
0
0.20
135
135
135
135
0.2
0.2
0.2
0.15
0.5
0.5
Rev. 04 - 22 November 2007
0.10
0.5
0.05
90
90
90
90
1
1
1
40 MHz
3 GHz
3 GHz
2
2
2
5
45
45
40 MHz
45
45
5
5
MRA649
MRA648
22
BFG505; BFG505/X
0
).
0
12
).
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
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