BFG505/X,235 NXP Semiconductors, BFG505/X,235 Datasheet - Page 7
![TRANS RF NPN 9GHZ SOT4](/photos/16/4/160413/sot143_sml.jpg)
BFG505/X,235
Manufacturer Part Number
BFG505/X,235
Description
TRANS RF NPN 9GHZ SOT4
Manufacturer
NXP Semiconductors
Datasheet
1.BFG505215.pdf
(13 pages)
Specifications of BFG505/X,235
Package / Case
TO-253-4, TO-253AA
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.2dB ~ 2.1dB @ 900MHz
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 6V
Current - Collector (ic) (max)
18mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
60
Dc Current Gain Hfe Max
250
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
18 mA
Power Dissipation
150 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
andbook, halfpage
NXP Semiconductors
handbook, full pagewidth
NPN 9 GHz wideband transistors
F min
V
Fig.11 Minimum noise figure and associated
Z
V
(dB)
o
CE
CE
= 50 .
5
4
3
2
1
0
= 6 V.
= 6 V; I
10
2
5 mA
1.25 mA
available gain as functions of frequency.
I C = 1.25 mA
c
= 1.25 mA; f = 900 MHz.
F min
5 mA
stability
circle
10
G ass
180
3
f (MHz)
0
135
135
0.2
0.2
0.2
MRA651
pot. unst.
region
0.5
0.5
10
Fig.12 Noise circle figure.
Rev. 04 - 22 November 2007
20
15
10
0
G ass
5
4
(dB)
5
0.5
90
90
1
1
1
F = 3 dB
F = 2 dB
F = 1.5 dB
F min = 1. 2 dB
2
2
2
OPT
5
45
45
5
5
MRA652
BFG505; BFG505/X
0
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
7 of 13