BFG505/X,235 NXP Semiconductors, BFG505/X,235 Datasheet - Page 3

• Manufacturer Part Number: BFG505/X,235
• Description: TRANS RF NPN 9GHZ SOT4
• Manufacturer: NXP Semiconductors

Specifications of BFG505/X,235

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 250
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 18 mA
• Power Dissipation: 150 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
THERMAL CHARACTERISTICS
Note
1. T
handbook, halfpage
V
V
V
I
P
T
T
R
SYMBOL
C
stg
j
CBO
CES
EBO
tot
th j-s
NPN 9 GHz wideband transistors
SYMBOL
(mW)
s
s
P tot
200
150
100
is the temperature at the soldering point of the collector pin.
is the temperature at the soldering point of the collector pin.
50
0
0
thermal resistance from junction to soldering point
Fig.2 Power derating curve.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
50
PARAMETER
100
PARAMETER
150
T s ( C)
MRA638-1
200
Rev. 04 - 22 November 2007
open emitter
R
open collector
T
s
BE
= 0
130 C; see Fig.2; note 1
CONDITIONS
note 1
CONDITIONS
BFG505; BFG505/X
65
MIN.
20
15
2.5
18
150
150
175
Product specification
VALUE
MAX.
290
3 of 13
V
V
V
mA
mW
C
C
UNIT
UNIT
K/W