PBSS4032SPN,115 NXP Semiconductors, PBSS4032SPN,115 Datasheet - Page 10

• Manufacturer Part Number: PBSS4032SPN,115
• Description: TRANS ARRAY NPN/PNP 30V SO8
• Manufacturer: NXP Semiconductors

Specifications of PBSS4032SPN,115

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 5.7A, 4.8A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 450mV @ 300mA, 6A / 510mV @ 250mA, 5A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 2A, 2V / 150 @ 2A, 2V
• Power - Max: 2.3W
• Frequency - Transition: 140MHz, 115MHz
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-6400-2; PBSS4032SPN,115

NXP Semiconductors
PBSS4032SPN
Product data sheet
Fig 9.
Fig 11. TR1 (NPN): Collector-emitter saturation
V
R
CEsat
CEsat
(Ω)
(V)
10
10
(1) T
(2) T
(3) T
10
10
(1) T
(2) T
(3) T
10
10
10
−1
−2
−1
−2
1
1
10
3
2
10
I
TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
I
resistance as a function of collector current;
typical values
−1
C
−1
C
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 20
= 20
= 100 °C
= 25 °C
= −55 °C
= 100 °C
= 25 °C
= −55 °C
1
1
(1)
(2)
(3)
10
10
10
10
2
2
10
10
All information provided in this document is subject to legal disclaimers.
006aac310
(1)
(2)
(3)
3
006aac312
3
I
I
C
C
(mA)
(mA)
10
10
Rev. 2 — 14 October 2010
4
4
Fig 10. TR1 (NPN): Collector-emitter saturation
Fig 12. TR1 (NPN): Collector-emitter saturation
R
V
CEsat
CEsat
(Ω)
(V)
10
10
(1) I
(2) I
(3) I
10
10
(1) I
(2) I
(3) I
10
10
10
−1
−2
−1
−2
1
1
10
3
2
10
T
voltage as a function of collector current;
typical values
T
resistance as a function of collector current;
typical values
−1
C
C
C
−1
C
C
C
amb
amb
30 V NPN/PNP low V
/I
/I
/I
/I
/I
/I
B
B
B
B
B
B
= 100
= 50
= 10
= 100
= 50
= 10
= 25 °C
= 25 °C
1
1
(1)
(2)
(3)
10
10
PBSS4032SPN
10
10
2
2
CEsat
© NXP B.V. 2010. All rights reserved.
10
10
(BISS) transistor
006aac311
3
006aac313
3
I
I
C
C
(1)
(2)
(3)
(mA)
(mA)
10
10
4
4
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