PBSS4032SPN,115 NXP Semiconductors, PBSS4032SPN,115 Datasheet - Page 2

• Manufacturer Part Number: PBSS4032SPN,115
• Description: TRANS ARRAY NPN/PNP 30V SO8
• Manufacturer: NXP Semiconductors

Specifications of PBSS4032SPN,115

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 5.7A, 4.8A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 450mV @ 300mA, 6A / 510mV @ 250mA, 5A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 2A, 2V / 150 @ 2A, 2V
• Power - Max: 2.3W
• Frequency - Transition: 140MHz, 115MHz
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-6400-2; PBSS4032SPN,115

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
PBSS4032SPN
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
Table 5.
Symbol Parameter
TR2; PNP low V
V
I
I
R
Pin
1
2
3
4
5
6
7
8
Type number
PBSS4032SPN SO8
Type number
PBSS4032SPN
C
CM
CEO
CEsat
Pulse test: t
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
Quick reference data
Pinning
Ordering information
Marking codes
p
emitter TR1
base TR1
emitter TR2
base TR2
collector TR2
collector TR2
collector TR1
collector TR1
Description
≤ 300 μs; δ ≤ 0.02.
CEsat
All information provided in this document is subject to legal disclaimers.
Package
Name
transistor
Rev. 2 — 14 October 2010
Description
plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
…continued
open base
single pulse; t
Conditions
I
C
= −4 A; I
30 V NPN/PNP low V
B
Marking code
4032SPN
= −0.4 A
p
≤ 1 ms
Simplified outline
8
1
PBSS4032SPN
[1]
Min
-
-
-
-
5
4
CEsat
Typ
-
-
-
65
Graphic symbol
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
TR1
8
1
Max
−30
−4.8
−10
98
7
2
006aaa985
TR2
Version
6
3
Unit
V
A
A
mΩ
5
4
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