PBSS4032SPN,115 NXP Semiconductors, PBSS4032SPN,115 Datasheet - Page 16

TRANS ARRAY NPN/PNP 30V SO8

PBSS4032SPN,115

Manufacturer Part Number
PBSS4032SPN,115
Description
TRANS ARRAY NPN/PNP 30V SO8
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS4032SPN,115

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
5.7A, 4.8A
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
450mV @ 300mA, 6A / 510mV @ 250mA, 5A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 2A, 2V / 150 @ 2A, 2V
Power - Max
2.3W
Frequency - Transition
140MHz, 115MHz
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-6400-2
PBSS4032SPN,115
NXP Semiconductors
11. Soldering
PBSS4032SPN
Product data sheet
Fig 26. Reflow soldering footprint SOT96-1 (SO8)
Fig 27. Wave soldering footprint SOT96-1 (SO8)
solder lands
occupied area
solder lands
occupied area
All information provided in this document is subject to legal disclaimers.
0.60 (6×)
placement accurracy ± 0.25
Rev. 2 — 14 October 2010
placement accuracy ± 0.25
solder resist
board direction
1.27 (6×)
0.3 (2×)
5.50
1.20 (2×)
5.50
0.60 (8×)
30 V NPN/PNP low V
1.27 (6×)
1.30
4.00
1.30
4.00
Dimensions in mm
6.60
Dimensions in mm
enlarged solder land
6.60
7.00
PBSS4032SPN
7.00
CEsat
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
sot096-1_fw
sot096-1_fr
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