MB9BF104RPMC-GE1 Fujitsu Semiconductor America Inc, MB9BF104RPMC-GE1 Datasheet - Page 48
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MB9BF104RPMC-GE1
Manufacturer Part Number
MB9BF104RPMC-GE1
Description
IC MCU 32BIT 256KB FLASH 120LQFP
Manufacturer
Fujitsu Semiconductor America Inc
Series
FM3 MB9B100r
Datasheets
1.MB9BF104NPMC-G-JNE1.pdf
(100 pages)
2.MB9BF104NPMC-G-JNE1.pdf
(4 pages)
3.MB9BF104RPMC-GE1.pdf
(1 pages)
Specifications of MB9BF104RPMC-GE1
Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
80MHz
Connectivity
CSIO, EBI/EMI, I²C, LIN, UART/USART
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
100
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 16x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
120-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
865-1117
48
MB9B100 Series
C Pin
Mode pins (MD0, MD1)
Notes on power-on
Serial Communication
Differences in features among the products with different memory sizes and
between FLASH products and MASK products
As this series includes an internal regulator, always connect a bypass capacitor of approximately 4.7 µF to
the C pin for use by the regulator.
Connect the MD pin (MD0, MD1) directly to VCC or VSS pins. Design the printed circuit board such that
the pull-up/down resistance stays low, as well as the distance between the mode pins and VCC pins or VSS
pins is as short as possible and the connection impedance is low, when the pins are pulled-up/down such as
for switching the pin level and rewriting the Flash memory data. It is because of preventing the device
erroneously switching to test mode due to noise.
Turn power on/off in the following order or at the same time.
If not using the A/D converter, connect AVCC =VCC and AVSS = VSS.
There is a possibility to receive wrong data due to the noise or other causes on the serial communication.
Therefore, design a printed circuit board so as to avoid noise.
Consider the case of receiving wrong data due to noise, perform error detection such as by applying a
checksum of data at the end. If an error is detected, restransmit the data.
The electric characteristics including power consumption, ESD, latch-up, noise characteristics, and
oscillation characteristics among the products with different memory sizes and between FLASH products
and MASK products are different because chip layout and memory structures are different.
If you are switching to use a different product of the same series, please make sure to evaluate the electric
characteristics.
Turning on : VCC AVCC AVRH
Turning off : AVRH AVCC VCC
Device
VSS
C
GND
4.7μF
DS706-00007-1v0-E