2SC0108T2A0-17 CT CONCEPT, 2SC0108T2A0-17 Datasheet - Page 5

• Manufacturer Part Number: 2SC0108T2A0-17
• Description: IC, IGBT DRIVER, 1700V, 8A, PCB
• Manufacturer: CT CONCEPT

Specifications of 2SC0108T2A0-17

• Device Type: IGBT
• Module Configuration: Dual
• Peak Output Current: 8A
• Output Resistance: 0.5ohm
• Input Delay: 90ns
• Output Delay: 75ns
• Supply Voltage Range: 14.5V To 15.5V
• Driver Case Style: PCB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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This data sheet specifies devices but cannot promise to deliver any specific characteristics. No warranty or
guarantee is given – either expressly or implicitly – regarding delivery, performance or suitability.
CT-Concept Technologie AG reserves the right to make modifications to its technical data and product
specifications at any time without prior notice. The general terms and conditions of delivery of CT-Concept
Technologie AG apply.
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resistance of the power module / transistor.
The minimum response time given is valid for the circuit given in the description and application
manual (Fig. 6) with the values of table 1 (C
The blocking time sets a minimum time span between the end of any fault state and the start of
normal operation (remove fault from pin SOx). The value of the blocking time can be adjusted at pin
TB. The specified blocking time is valid if TB is connected to GND.
This specification guarantees that the drive information will be transferred reliably even at a high DC-
link voltage and with ultra-fast switching operations.
Undervoltage monitoring of the primary-side supply voltage (VCC to GND). If the voltage drops
below this limit, a fault is transmitted to both SOx outputs and the IGBTs are switched off.
Undervoltage monitoring of the secondary-side supply voltage (VISOx to COMx). If the voltage drops
below this limit, the corresponding IGBT is switched off and a fault is transmitted to the
corresponding SOx output.
Transmission delay of fault state from the secondary side to the corresponding primary status
output.
HiPot testing (= dielectric testing) must generally be restricted to suitable components. This gate
driver is suited for HiPot testing. Nevertheless, it is strongly recommended to limit the testing time to
1s slots as stipulated by EN 50178. Excessive HiPot testing at voltages much higher than 1200V
may lead to insulation degradation. No degradation has been observed over 1min. testing at
5000V
value for 1s.
The resulting gate resistance is the sum of the external and the internal gate resistance.
Partial discharge measurement is performed in accordance with IEC 60270 and isolation coordination
specified in EN 50178. The partial discharge extinction voltage between primary and either secondary
side is coordinated for safe isolation to EN 50178.
AC(eff)
. Every production sample shipped to customers has undergone 100% testing at the given
ax
=0pF, R
thx
=43kΩ).
Preliminary Data Sheet
2SC0108T2Ax-17
AC(eff)
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