IS43R16160B-6TL INTEGRATED SILICON SOLUTION (ISSI), IS43R16160B-6TL Datasheet - Page 31

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IS43R16160B-6TL

Manufacturer Part Number
IS43R16160B-6TL
Description
SDRAM, DDR, 16M X 16, 2.5V, 66TSOP2
Manufacturer
INTEGRATED SILICON SOLUTION (ISSI)
Datasheet

Specifications of IS43R16160B-6TL

Access Time
0.7ns
Page Size
256Mbit
Memory Case Style
TSOP-2
No. Of Pins
66
Operating Temperature Range
0°C To +70°C
Memory Type
DRAM - Synchronous
Memory Configuration
4 BLK (4M X 16)
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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DDR SDRAM (Rev.1.1)
IS43R83200B
IS43R16160B, IC43R16160B
Integrated Silicon Solution, Inc.
Rev. B
10/31/08
[Read Interrupted by Burst Stop]
is minimum 1 CLK. A TERM command to output disable latency is equivalent to the /CAS Latency.
As a result, READ to TERM interval determines valid data length to be output. The figure below
shows examples of BL=8.
Burst read operation can be interrupted by a burst stop command(TERM). READ to TERM interval
CL=2.0
CL=2.5
Command
Command
Command
Command
Command
Command
Preliminary
DQS
DQS
DQS
DQS
/CLK
Preliminary
DQS
DQS
CLK
DQ
DQ
DQ
DQ
DQ
DQ
READ
READ
Read Interrupted by TERM (BL=8)
READ
READ
READ
READ
TERM
TERM
TERM
TERM
Q0
Q0
Q0
256M Double Data Rate Synchronous DRAM
Q1
Q1
Q1
TERM
Q0
Q0
TERM
Q0
Q2
Q2
Q1
Q1
Q1
Q3
Q3
Q2
Q2
Q4
Q3
Q3
Q5
Q4
Q5
A3S56D30/40ETP
31

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