TEA1751LT/N1 NXP Semiconductors, TEA1751LT/N1 Datasheet - Page 13

AC-DC, PFC, FLYBACK, CNTRL, 16SOIC

TEA1751LT/N1

Manufacturer Part Number
TEA1751LT/N1
Description
AC-DC, PFC, FLYBACK, CNTRL, 16SOIC
Manufacturer
NXP Semiconductors
Datasheet

Specifications of TEA1751LT/N1

Input Voltage
276V
Output Current
1.2A
Output Voltage
11V
No. Of Outputs
2
Power Dissipation Pd
600mW
Voltage Regulator Case Style
SOIC
No. Of Pins
16
Operating Temperature Range
-40°C To
Supply Voltage Range
21V To 23V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TEA1751LT/N1
Manufacturer:
SEIKO
Quantity:
55 000
Part Number:
TEA1751LT/N1
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
TEA1751T_LT_2
Product data sheet
7.3.2 Valley switching (HV pin)
Refer to
on-time (determined by the FBSENSE voltage and the FBCTRL voltage), the MOSFET is
switched off and the secondary stroke starts. After the secondary stroke, the drain voltage
shows an oscillation with a frequency of approximately
the primary self-inductance of the flyback transformer and C
drain node.
As soon as the internal oscillator voltage is high again and the secondary stroke has
ended, the circuit waits for the lowest drain voltage before starting a new primary stroke.
Figure 9
oscillator signal.
Valley switching allows high frequency operation as capacitive switching losses are
reduced, see
magnetics possible.
Fig 8.
P
=
1
-- -
2
×
switching frequency
Figure
shows the drain voltage, valley signal, secondary stroke signal and the internal
C
Frequency control of flyback part
d
×
Equation
V
f
2
9. A new cycle starts when the external MOSFET is activated. After the
sw(fb)max
×
f
Rev. 02 — 23 December 2009
1. High frequency operation makes small and cost-effective
frequency
reduction
PFC off
1.5 V
TEA1751T; TEA1751LT
PFC on
discontinuous
with valley
switching
V
FBCTRL
-------------------------------------------------- -
(
2
GreenChip III SMPS control IC
×
π
d
is the capacitance on the
×
quasi resonant
1
(
L
p
×
C
© NXP B.V. 2009. All rights reserved.
d
)
)
014aaa159
where L
13 of 29
p
is
(1)

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