SST25VF080B-50-4I-QAF SILICON STORAGE TECHNOLOGY, SST25VF080B-50-4I-QAF Datasheet - Page 11

• Manufacturer Part Number: SST25VF080B-50-4I-QAF
• Description: 8M FLASH MEMORY, SPI EEPROM, WSON-8
• Manufacturer: SILICON STORAGE TECHNOLOGY

Specifications of SST25VF080B-50-4I-QAF

• Memory Size: 8Mbit
• Clock Frequency: 50MHz
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: WSON
• No. Of Pins: 8
• Svhc: No SVHC (18-Jun-2010)
• Package / Case: WSON
• Device: RoHS Compliant
• Memory Type: Flash
• Memory Configuration: 1M X 8
• Interface Type: Serial, SPI
• Rohs Compliant: Yes

8 Mbit SPI Serial Flash
SST25VF080B
Byte-Program
The Byte-Program instruction programs the bits in the
selected byte to the desired data. The selected byte must
be in the erased state (FFH) when initiating a Program
operation. A Byte-Program instruction applied to a pro-
tected memory area will be ignored.
Prior to any Write operation, the Write-Enable (WREN)
instruction must be executed. CE# must remain active low
for the duration of the Byte-Program instruction. The Byte-
©2006 Silicon Storage Technology, Inc.
FIGURE 6: B
YTE
-P
ROGRAM
SCK
CE#
SO
SI
MODE 3
MODE 0
S
EQUENCE
MSB
0 1 2 3 4 5 6 7 8
02
HIGH IMPEDANCE
MSB
11
ADD.
Program instruction is initiated by executing an 8-bit com-
mand, 02H, followed by address bits [A
address, the data is input in order from MSB (bit 7) to LSB
(bit 0). CE# must be driven high before the instruction is
executed. The user may poll the Busy bit in the software
status register or wait T
self-timed Byte-Program operation. See Figure 6 for the
Byte-Program sequence.
15 16
ADD.
23 24
ADD.
31 32
MSB
1296 ByteProg.0
D
BP
IN
LSB
for the completion of the internal
39
23
S71296-01-000
-A
0
]. Following the
Data Sheet
1/06