SST25VF080B-50-4C-PAE SST [Silicon Storage Technology, Inc], SST25VF080B-50-4C-PAE Datasheet

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SST25VF080B-50-4C-PAE

Manufacturer Part Number
SST25VF080B-50-4C-PAE
Description
8 Mbit SPI Serial Flash
Manufacturer
SST [Silicon Storage Technology, Inc]
Datasheet
FEATURES:
• Single Voltage Read and Write Operations
• Serial Interface Architecture
• High Speed Clock Frequency
• Superior Reliability
• Low Power Consumption:
• Flexible Erase Capability
• Fast Erase and Byte-Program:
PRODUCT DESCRIPTION
SST’s 25 series Serial Flash family features a four-wire,
SPI-compatible interface that allows for a low pin-count
package which occupies less board space and ultimately
lowers total system costs. The SST25VF080B devices are
enhanced with improved operating frequency and lower
power consumption. SST25VF080B SPI serial flash mem-
ories are manufactured with SST’s proprietary, high-perfor-
mance CMOS SuperFlash technology. The split-gate cell
design and thick-oxide tunneling injector attain better reli-
ability and manufacturability compared with alternate
approaches.
©2010 Silicon Storage Technology, Inc.
S71296-04-000
1
– 2.7-3.6V
– SPI Compatible: Mode 0 and Mode 3
– 50/66 MHz conditional (see Table 13)
– 80 MHz
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
– Active Read Current: 10 mA (typical)
– Standby Current: 5 µA (typical)
– Uniform 4 KByte sectors
– Uniform 32 KByte overlay blocks
– Uniform 64 KByte overlay blocks
– Chip-Erase Time: 35 ms (typical)
– Sector-/Block-Erase Time: 18 ms (typical)
– Byte-Program Time: 7 µs (typical)
- (SST25VF080B-50-xx-xxxx)
- (SST25VF080B-80-xx-xxxx)
01/10
SST25VF080B8Mb Serial Peripheral Interface (SPI) flash memory
8 Mbit SPI Serial Flash
SST25VF080B
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
• Auto Address Increment (AAI) Programming
• End-of-Write Detection
• Hold Pin (HOLD#)
• Write Protection (WP#)
• Software Write Protection
• Temperature Range
• Packages Available
• All devices are RoHS compliant
The SST25VF080B devices significantly improve perfor-
mance and reliability, while lowering power consumption.
The devices write (Program or Erase) with a single power
supply of 2.7-3.6V for SST25VF080B. The total energy
consumed is a function of the applied voltage, current, and
time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and
has a shorter erase time, the total energy consumed during
any Erase or Program operation is less than alternative
flash memory technologies.
The SST25VF080B device is offered in 8-lead SOIC (200
mils), 8-contact WSON (6mm x 5mm), and 8-lead PDIP
(300 mils) packages. See Figure 2 for pin assignments.
– Decrease total chip programming time over
– Software polling the BUSY bit in Status Register
– Busy Status readout on SO pin in AAI Mode
– Suspends a serial sequence to the memory
– Enables/Disables the Lock-Down function of the
– Write protection through Block-Protection bits in
– Commercial: 0°C to +70°C
– Industrial: -40°C to +85°C
– 8-lead SOIC (200 mils)
– 8-contact WSON (6mm x 5mm)
– 8-lead PDIP (300 mils)
Byte-Program operations
without deselecting the device
status register
status register
These specifications are subject to change without notice.
Data Sheet

Related parts for SST25VF080B-50-4C-PAE

SST25VF080B-50-4C-PAE Summary of contents

Page 1

... Erase or Program operation is less than alternative flash memory technologies. The SST25VF080B device is offered in 8-lead SOIC (200 mils), 8-contact WSON (6mm x 5mm), and 8-lead PDIP (300 mils) packages. See Figure 2 for pin assignments. ...

Page 2

... Data Sheet Address Buffers and Latches CE# FIGURE 1: Functional Block Diagram ©2010 Silicon Storage Technology, Inc Decoder Control Logic Serial Interface SCK SI SO WP# HOLD Mbit SPI Serial Flash SST25VF080B SuperFlash Memory Y - Decoder I/O Buffers and Data Latches 1296 B1.0 S71296-04-000 01/10 ...

Page 3

... The Write Protect (WP#) pin is used to enable/disable BPL bit in the status register. HOLD# Hold To temporarily stop serial communication with SPI flash memory without resetting the device. V Power Supply To provide power supply voltage: 2.7-3.6V for SST25VF080B DD V Ground SS ©2010 Silicon Storage Technology, Inc ...

Page 4

... Serial Data Input (SI), Serial Data Output (SO), and Serial Clock (SCK). The SST25VF080B supports both Mode 0 (0,0) and Mode 3 (1,1) of SPI bus operations. The difference between the two modes, as shown in Figure 3, is the state of the SCK signal when the bus master is in Stand-by mode and no data is being transferred ...

Page 5

... HOLD# Active FIGURE 4: Hold Condition Waveform Write Protection SST25VF080B provides software Write protection. The Write Protect pin (WP#) enables or disables the lock-down function of the status register. The Block-Protection bits (BP3, BP2, BP1, BP0, and BPL) in the status register pro- vide Write protection to the memory array and the status register ...

Page 6

... Default at Power- Auto Address Increment (AAI) The Auto Address Increment Programming-Status bit pro- vides status on whether the device is in AAI programming mode or Byte-Program mode. The default at power up is Byte-Program mode. 6 SST25VF080B Read/Write R R R/W R/W R/W R/W R R/W T3.0 1296 S71296-04-000 01/10 ...

Page 7

... WP# is high or the Block-Protect-Lock (BPL) bit is 0. Chip-Erase can only be executed if Block- Protection bits are all 0. After power-up, BP3, BP2, BP1 and BP0 are set to 1. TABLE 4: Software Status Register Block Protection for SST25VF080B Protection Level None Upper 1/16 Upper 1/8 ...

Page 8

... Data Sheet Instructions Instructions are used to read, write (Erase and Program), and configure the SST25VF080B. The instruction bus cycles are 8 bits each for commands (Op Code), data, and addresses. Prior to executing any Byte-Program, Auto Address Increment (AAI) programming, Sector-Erase, Block-Erase, Write-Status-Register, or Chip-Erase instruc- tions, the Write-Enable (WREN) instruction must be exe- cuted first ...

Page 9

... The Read instruction, 03H, supports MHz (for SST25VF080B-50-xx-xxxx) or SST25VF080B-80-xx-xxxx) Read. The device outputs the data starting from the specified address location. The data output stream is continuous through all addresses until ter- minated by a low to high transition on CE#. The internal address pointer will automatically increment until the high- est memory address is reached ...

Page 10

... FFFFFH has been read, the next output will be from address location 00000H ADD. ADD. ADD. X MSB MSB Mbit SPI Serial Flash SST25VF080B N+1 N+2 N+3 N OUT OUT OUT OUT OUT 1296 HSRdSeq ...

Page 11

... Mbit SPI Serial Flash SST25VF080B Byte-Program The Byte-Program instruction programs the bits in the selected byte to the desired data. The selected byte must be in the erased state (FFH) when initiating a Program operation. A Byte-Program instruction applied to a pro- tected memory area will be ignored. ...

Page 12

... SCK =1. CE# must be 0 FIGURE 8: Enable SO as Hardware RY/BY# CE# SCK FIGURE 9: Disable SO as Hardware RY/BY Mbit SPI Serial Flash SST25VF080B MODE MODE MSB SO HIGH IMPEDANCE 1296 EnableSO.0 during AAI Programming MODE ...

Page 13

... Mbit SPI Serial Flash SST25VF080B CE MODE 3 SCK MODE Load AAI command, Address, 2 bytes data SO Note: 1. Valid commands during AAI programming: AAI command or WRDI command 2. User must configure the SO pin to output Flash Busy status during AAI programming ...

Page 14

... Most ADD. ADD. MSB MSB HIGH IMPEDANCE 14 8 Mbit SPI Serial Flash SST25VF080B ), remaining address bits can for the completion of the internal self-timed ADD. 1296 SecErase.0 S71296-04-000 IH. 01/10 ...

Page 15

... Mbit SPI Serial Flash SST25VF080B 32-KByte and 64-KByte Block-Erase The 32-KByte Block-Erase instruction clears all bits in the selected 32 KByte block to FFH. A Block-Erase instruction applied to a protected memory area will be ignored. The 64-KByte Block-Erase instruction clears all bits in the selected 64 KByte block to FFH. A Block-Erase instruction applied to a protected memory area will be ignored ...

Page 16

... CE#. See Figure 16 for the RDSR instruction sequence Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 MSB 16 8 Mbit SPI Serial Flash SST25VF080B Status Register Out 1296 RDSRseq.0 S71296-04-000 CE 01/10 ...

Page 17

... Mbit SPI Serial Flash SST25VF080B Write-Enable (WREN) The Write-Enable (WREN) instruction sets the Write- Enable-Latch bit in the Status Register to 1 allowing Write operations to occur. The WREN instruction must be exe- cuted prior to any Write (Program/Erase) operation. The WREN instruction may also be used to allow execution of ...

Page 18

... BP2 bits at the same time. See Table 2 for a summary description of WP# and BPL functions MODE 3 MODE 0 STATUS REGISTER MSB MSB HIGH IMPEDANCE 18 SST25VF080B ) prior to the IH 1296 EWSR.0 S71296-04-000 01/10 ...

Page 19

... SST25VF080B JEDEC Read-ID The JEDEC Read-ID instruction identifies the device as SST25VF080B and the manufacturer as SST. The device information can be read from executing the 8-bit command, 9FH. Following the JEDEC Read-ID instruction, the 8-bit manufacturer’s ID, BFH, is output from the device. After that, a 16-bit device ID is shifted out on the SO pin ...

Page 20

... Data Sheet Read-ID (RDID) The Read-ID instruction (RDID) identifies the devices as SST25VF080B and manufacturer as SST. This command is backward compatible and should be used as default device identification when multiple versions of SPI Serial Flash devices are used in a design. The device information can be read from executing an 8-bit command, 90H or ...

Page 21

... Output shorted for no more than one second. No more than one output shorted at a time. Operating Range Range Ambient Temp Commercial 0°C to +70°C Industrial -40°C to +85°C TABLE 8: DC Operating Characteristics (SST25VF080B-50-xx-xxxx) Symbol Parameter I Read Current DDR I Read Current DDR2 ...

Page 22

... Data Sheet TABLE 9: DC Operating Characteristics (SST25VF080B-80-xx-xxxx) Symbol Parameter I Read Current DDR I Read Current DDR3 I Program and Erase Current DDW I Standby Current SB I Input Leakage Current LI I Output Leakage Current LO V Input Low Voltage IL V Input High Voltage IH V Output Low Voltage ...

Page 23

... Mbit SPI Serial Flash SST25VF080B TABLE 13: AC Operating Characteristics (SST25VF080B-50-xx-xxxx) Symbol Parameter 3 F Serial Clock Frequency CLK T Serial Clock High Time SCKH T Serial Clock Low Time SCKL 4 T Serial Clock Rise Time (Slew Rate) SCKR T Serial Clock Fall Time (Slew Rate) ...

Page 24

... Data Sheet TABLE 14: AC Operating Characteristics (SST25VF080B-80-xx-xxxx) Symbol Parameter 1 F Serial Clock Frequency CLK T Serial Clock High Time SCKH T Serial Clock Low Time SCKL 2 T Serial Clock Rise Time (Slew Rate) SCKR T Serial Clock Fall Time (Slew Rate) SCKF 3 T CE# Active Setup Time ...

Page 25

... Mbit SPI Serial Flash SST25VF080B CE CHH CES SCK MSB SI SO HIGH-Z FIGURE 22: Serial Input Timing Diagram CE# T SCKH SCK T CLZ SO SI FIGURE 23: Serial Output Timing Diagram ©2010 Silicon Storage Technology, Inc. T SCKF T SCKR T SCKL T OH MSB Data Sheet ...

Page 26

... Commands may not be accepted or properly interpreted by the device. V Min DD FIGURE 25: Power-up Timing Diagram ©2010 Silicon Storage Technology, Inc HHS HHH HLS T HLH PU-READ Device fully accessible T PU-WRITE 26 8 Mbit SPI Serial Flash SST25VF080B T LZ 1296 Hold.0 Time 1296 PwrUp.0 S71296-04-000 01/10 ...

Page 27

... Mbit SPI Serial Flash SST25VF080B V IHT INPUT V ILT AC test inputs are driven at V (0.9V IHT for inputs and outputs are V (0.6V HT FIGURE 26: AC Input/Output Reference Waveforms FIGURE 27: A Test Load Example ©2010 Silicon Storage Technology, Inc REFERENCE POINTS for a logic “1” and V (0 ...

Page 28

... Environmental suffix “E” denotes non-Pb solder. SST non-Pb solder devices are “RoHS Compliant”. 2. Environmental suffix “F” denotes non-Pb/non-SN solder. SST non-Pb/non-Sn solder devices are “RoHS Compliant”. SST25VF080B-50-4C-PAE 28 8 Mbit SPI Serial Flash SST25VF080B S71296-04-000 ...

Page 29

... Mbit SPI Serial Flash SST25VF080B PACKAGING DIAGRAMS Pin #1 TOP VIEW Identifier 5.40 5.15 5.40 5.15 8.10 7.70 Note: 1. All linear dimensions are in millimeters (max/min). 2. Coplanarity: 0 Maximum allowable mold flash is 0. the package ends and 0.25 mm between leads. FIGURE 28: 8-lead Small Outline Integrated Circuit (SOIC) 200 mil body width (5.2mm x 8mm) SST Package Code: S2A © ...

Page 30

... FIGURE 29: 8-contact Very-very-thin Small Outline No-lead (WSON) SST Package Code: QA ©2010 Silicon Storage Technology, Inc. SIDE VIEW 0.2 5.00 ± 0.10 0.076 0.05 Max 0.80 0.70 leads. 1mm SS of the unit Mbit SPI Serial Flash SST25VF080B BOTTOM VIEW Pin #1 1.27 BSC 4.0 0.48 0.35 3.4 0.70 0.50 CROSS SECTION 0.80 0.70 8-wson-5x6-QA-9.0 S71296-04-000 01/10 ...

Page 31

... Mbit SPI Serial Flash SST25VF080B TOP VIEW 0.355 0.400 Pin 1 SIDE VIEW 0.056 0.064 0.115 0.150 0.014 0.022 0.100 BSC Note: 1. Complies with JEDEC publication 95 MS-001 BA dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (min/max). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .010 inches. ...

Page 32

... Added Table 9 on page 22 and Table 14 on page 24 • Edited Product Ordering Information • Added Valid Combinations SST25VF080B-80-4C-S2AE, SST25VF080B-80-4I- S2AE, SST25VF080B-80-4C-QAE, and SST25VF080B-80-4I-QAE Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036 ©2010 Silicon Storage Technology, Inc. ...

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