PESD6V0L2UU NXP Semiconductors, PESD6V0L2UU Datasheet - Page 3

• Manufacturer Part Number: PESD6V0L2UU
• Description: DIODE,TVS,UNI DIR,6V,60W,SOD323
• Manufacturer: NXP Semiconductors

Specifications of PESD6V0L2UU

• Reverse Stand-off Voltage Vrwm: 6V
• Breakdown Voltage Range: 6.4V To 7.2V
• Clamping Voltage Vc Max: 13.5V
• Diode Configuration: Common Anode
• Peak Pulse Current Ippm: 5.5A
• Diode Case Style: SOT-323
• No. Of: RoHS Compliant

NXP Semiconductors
5. Limiting values
PESD5V0L2UU_PESD6V0L2UU_1
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 7.
T
[1]
[2]
Table 8.
Symbol
Per diode
P
I
T
T
T
Symbol
V
Standard
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
PP
amb
j
amb
stg
PP
ESD
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 or 2 to pin 3.
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 or 2 to pin 3.
= 25 C unless otherwise specified.
Parameter
electrostatic discharge voltage
Limiting values
ESD maximum ratings
ESD standards compliance
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
PESD5V0L2UU
PESD6V0L2UU
PESD5V0L2UU
PESD6V0L2UU
PESD5V0L2UU; PESD6V0L2UU
Rev. 01 — 11 March 2009
Low capacitance unidirectional ESD protection diodes
Conditions
t
t
p
p
= 8/20 s
= 8/20 s
Conditions
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
[1][2]
[1][2]
Min
-
-
-
-
-
55
65
[1]
[2]
Min
-
-
© NXP B.V. 2009. All rights reserved.
Max
70
60
6.5
5.5
150
+150
+150
Max
30
16
Unit
W
W
A
A
C
C
C
Unit
kV
kV
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