PESD6V0L2UU NXP Semiconductors, PESD6V0L2UU Datasheet - Page 6

• Manufacturer Part Number: PESD6V0L2UU
• Description: DIODE,TVS,UNI DIR,6V,60W,SOD323
• Manufacturer: NXP Semiconductors

Specifications of PESD6V0L2UU

• Reverse Stand-off Voltage Vrwm: 6V
• Breakdown Voltage Range: 6.4V To 7.2V
• Clamping Voltage Vc Max: 13.5V
• Diode Configuration: Common Anode
• Peak Pulse Current Ippm: 5.5A
• Diode Case Style: SOT-323
• No. Of: RoHS Compliant

NXP Semiconductors
PESD5V0L2UU_PESD6V0L2UU_1
Product data sheet
Fig 3.
Fig 5.
(pF)
C
(1) unidirectional
(2) bidirectional
d
V
40
30
20
10
CL
0
0
f = 1 MHz; T
PESD5V0L2UU: Diode capacitance as a
function of reverse voltage; typical values
V-I characteristics for a unidirectional
ESD protection diode
V
BR
V
RWM
amb
P-N
2
= 25 C
+
(1)
(2)
I
4
I
I
I
RM
R
PP
V
R
006aab435
(V)
006aaa407
PESD5V0L2UU; PESD6V0L2UU
Rev. 01 — 11 March 2009
6
V
Low capacitance unidirectional ESD protection diodes
Fig 4.
Fig 6.
V
(pF)
CL
C
(1) unidirectional
(2) bidirectional
d
40
30
20
10
0
V
BR
0
f = 1 MHz; T
PESD6V0L2UU: Diode capacitance as a
function of reverse voltage; typical values
V-I characteristics for a bidirectional
ESD protection diode
V
RWM
amb
2
= 25 C
(1)
(2)
I
I
RM
PP
I
R
I
I
I
RM
R
PP
4
© NXP B.V. 2009. All rights reserved.
V
R
006aab436
(V)
V
RWM
+
6
006aaa676
V
BR
V
6 of 13
CL