PESD6V0L2UU NXP Semiconductors, PESD6V0L2UU Datasheet - Page 9

• Manufacturer Part Number: PESD6V0L2UU
• Description: DIODE,TVS,UNI DIR,6V,60W,SOD323
• Manufacturer: NXP Semiconductors

Specifications of PESD6V0L2UU

• Reverse Stand-off Voltage Vrwm: 6V
• Breakdown Voltage Range: 6.4V To 7.2V
• Clamping Voltage Vc Max: 13.5V
• Diode Configuration: Common Anode
• Peak Pulse Current Ippm: 5.5A
• Diode Case Style: SOT-323
• No. Of: RoHS Compliant

NXP Semiconductors
8. Test information
9. Package outline
10. Packing information
PESD5V0L2UU_PESD6V0L2UU_1
Product data sheet
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors , and is
suitable for use in automotive applications.
Table 10.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
PESD5V0L2UU
PESD6V0L2UU
Fig 9.
For further information and the availability of packing methods, see
Package outline SOT323 (SC-70)
Packing methods
Package
SOT323
2.2
2.0
Dimensions in mm
PESD5V0L2UU; PESD6V0L2UU
Rev. 01 — 11 March 2009
1.35
1.15
Description
4 mm pitch, 8 mm tape and reel
Low capacitance unidirectional ESD protection diodes
1
2.2
1.8
1.3
3
2
0.4
0.3
0.45
0.15
Section
1.1
0.8
0.25
0.10
[1]
04-11-04
14.
Packing quantity
3000
-115
© NXP B.V. 2009. All rights reserved.
10000
-135
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