BLF578 NXP Semiconductors, BLF578 Datasheet - Page 11

• Manufacturer Part Number: BLF578
• Description: LDMOS,RF,1000W,HF-500MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLF578

• Drain Source Voltage Vds: 110V
• Continuous Drain Current Id: 88A
• Operating Frequency Range: 225MHz
• Rf Transistor Case: SOT-539A
• No. Of Pins: 4
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLF578_2
Product data sheet
Document ID
BLF578_2
Modifications:
BLF578_1
Revision history
Table 10.
Acronym
CW
EDGE
GSM
HF
LDMOS
LDMOST
RF
TTF
VSWR
Abbreviations
Release date
20100204
20081211
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Table 1 on page
Section 1 on page
Table 4 on page
Table 5 on page
Table 5 on page
Figure 1 on page
Table 6 on page
Table 6 on page
Table 7 on page
Section 8.2.1 on page
Description
Continuous Wave
Enhanced Data rates for GSM Evolution
Global System for Mobile communications
High Frequency
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
Time To Failure
Voltage Standing-Wave Ratio
Rev. 02 — 4 February 2010
Data sheet status
Product data sheet
Objective data sheet
1: added information for CW performance.
2: changed maximum value of I
3: changed value of R
3: added information about Z
3: added values vor V
3: changed typical value of I
4: changed some values.
3: added figure.
1: changed typical value of η
6: changed some graphs.
GSq
th(j-c)
.
.
Change notice
-
-
DSX
th(j-c)
D
D
.
.
.
.
Power LDMOS transistor
© NXP B.V. 2010. All rights reserved.
BLF578
Supersedes
BLF578_1
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