BLF578 NXP Semiconductors, BLF578 Datasheet - Page 14

• Manufacturer Part Number: BLF578
• Description: LDMOS,RF,1000W,HF-500MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLF578

• Drain Source Voltage Vds: 110V
• Continuous Drain Current Id: 88A
• Operating Frequency Range: 225MHz
• Rf Transistor Case: SOT-539A
• No. Of Pins: 4
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
6.1
7
7.1
8
8.1
8.2
8.2.1
8.3
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Ruggedness in class-AB operation . . . . . . . . . 4
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Impedance information . . . . . . . . . . . . . . . . . . . 6
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
RF performance . . . . . . . . . . . . . . . . . . . . . . . . 6
1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
Power LDMOS transistor
Date of release: 4 February 2010
Document identifier: BLF578_2
BLF578
All rights reserved.