BLS6G2731-6G NXP Semiconductors, BLS6G2731-6G Datasheet - Page 5

• Manufacturer Part Number: BLS6G2731-6G
• Description: LDMOS,RF,6W,2700M-3100MHZ,32V
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2731-6G

• Drain Source Voltage Vds: 60V
• Continuous Drain Current Id: 3.5A
• Operating Frequency Range: 1.2GHz To 1.4GHz
• Rf Transistor Case: SOT-975C
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLS6G2731-6G_1
Product data sheet
Fig 2. Power gain as a function of load power; typical
Fig 4. Drain efficiency as a function of load power;
(dB)
(%)
G
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
D
p
18
16
14
12
70
60
50
40
30
20
10
0
values
typical values
0
0
V
V
DS
DS
= 32 V; I
= 32 V; I
7.2 Graphs
Dq
Dq
6
6
= 25 mA; t
= 25 mA; t
(3)
p
p
(3)
= 300 s; = 10 %.
= 300 s; = 10 %.
12
12
(2)
(2)
P
P
L
L
001aaj447
001aaj449
(W)
(W)
(1)
(1)
Rev. 01 — 19 February 2009
18
18
Fig 3. Power gain as a function of load power; typical
Fig 5. Drain efficiency as a function of load power;
(dB)
(%)
G
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
D
p
18
16
14
12
70
60
50
40
30
20
10
0
values
typical values
0
V
0
V
DS
DS
= 32 V; I
= 32 V; I
LDMOS S-Band radar power transistor
Dq
Dq
6
6
= 25 mA; t
= 25 mA; t
BLS6G2731-6G
(3)
p
p
(3)
= 100 s;
= 100 s;
12
12
© NXP B.V. 2009. All rights reserved.
P
P
(2)
L
L
001aaj448
001aaj450
(W)
(W)
(2)
= 20 %.
= 20 %.
(1)
(1)
18
18
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