BLS6G2731-6G NXP Semiconductors, BLS6G2731-6G Datasheet - Page 6

• Manufacturer Part Number: BLS6G2731-6G
• Description: LDMOS,RF,6W,2700M-3100MHZ,32V
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2731-6G

• Drain Source Voltage Vds: 60V
• Continuous Drain Current Id: 3.5A
• Operating Frequency Range: 1.2GHz To 1.4GHz
• Rf Transistor Case: SOT-975C
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLS6G2731-6G_1
Product data sheet
Fig 6. Load power as a function of input power;
Fig 8. Power gain and drain efficiency as function of
(dB)
(W)
G
P
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
L
p
20
16
12
18
16
14
12
8
4
0
2650
typical values
frequency; typical values
0
V
V
DS
DS
= 32 V; I
= 32 V; I
0.1
2750
0.2
Dq
Dq
= 25 mA; t
= 25 mA; t
2850
0.3
G
D
p
0.4
2950
p
p
= 300 s; = 10 %.
= 300 s; = 10 %.
0.5
3050
001aaj451
0.6
001aaj453
f (MHz)
P
i
(W)
(1)
(2)
(3)
Rev. 01 — 19 February 2009
3150
0.7
50
40
30
20
(%)
D
Fig 7. Load power as a function of input power;
Fig 9. Power gain and drain efficiency as function of
(dB)
(W)
G
P
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
L
p
20
16
12
18
16
14
12
8
4
0
2650
typical values
frequency; typical values
0
V
V
DS
DS
= 32 V; I
= 32 V; I
0.1
LDMOS S-Band radar power transistor
2750
0.2
Dq
Dq
= 25 mA; t
= 25 mA; t
2850
BLS6G2731-6G
0.3
G
D
p
0.4
2950
p
p
= 100 s;
= 100 s;
0.5
3050
© NXP B.V. 2009. All rights reserved.
001aaj452
001aaj454
0.6
f (MHz)
= 20 %.
= 20 %.
P
i
(W)
(1)
(2)
(3)
3150
0.7
50
40
30
20
(%)
D
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