BLS6G2731-6G NXP Semiconductors, BLS6G2731-6G Datasheet - Page 8

• Manufacturer Part Number: BLS6G2731-6G
• Description: LDMOS,RF,6W,2700M-3100MHZ,32V
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2731-6G

• Drain Source Voltage Vds: 60V
• Continuous Drain Current Id: 3.5A
• Operating Frequency Range: 1.2GHz To 1.4GHz
• Rf Transistor Case: SOT-975C
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
9. Package outline
Fig 11. Package outline SOT975C
BLS6G2731-6G_1
Product data sheet
Earless flanged ceramic package; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
OUTLINE
SOT975C
0.143
0.120
3.63
3.05
A
0.133
0.127
3.38
3.23
b
0.009
0.007
0.23
0.18
c
IEC
A
H
0.258
0.252
6.55
6.40
D
0.273
0.267
6.93
6.78
D
1
0.258
0.252
6.55
6.40
JEDEC
E
0
U
D
D
b
0.273
0.267
6.93
6.78
1
1
REFERENCES
E
1
Rev. 01 — 19 February 2009
1
2
0.009
0.007
0.23
0.18
F
w
10.29
10.03
0.405
0.395
JEITA
1
H
M
scale
A
5
F
A
0.065
1.65
M
L
0.040
0.020
1.02
0.51
L
L
p
L
E
+0.002
p
1
+0.05
0.002
0.05
Q
U
LDMOS S-Band radar power transistor
2
10 mm
0.253
0.247
6.43
6.27
U
1
Q
0.253
0.247
6.43
6.27
BLS6G2731-6G
U
PROJECTION
EUROPEAN
2
0.020
0.51
w
1
E
7
0
7
0
© NXP B.V. 2009. All rights reserved.
ISSUE DATE
08-05-20
08-07-10
SOT975C
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