2MBI200SB-120-50 FUJI ELECTRIC, 2MBI200SB-120-50 Datasheet

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2MBI200SB-120-50

Manufacturer Part Number
2MBI200SB-120-50
Description
IGBT, 2 PACK MOD, 1200V, 200A, M235
Manufacturer
FUJI ELECTRIC
Datasheet
1.2MBI200SB-120-50.pdf (6 pages)

Specifications of 2MBI200SB-120-50

Module Configuration
Dual
Transistor Polarity
N Channel
Dc Collector Current
200A
Collector Emitter Voltage Vces
2.6V
Power Dissipation Max
1.5kW
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
2MBI200SB-120
IGBT MODULE (S series)
1200V / 200A / 2 in one package
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 2.5-3.5 N·m (M5 or M6), Terminals : 3.5-4.5 N·m (M6)
Note *3: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Items
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Isolation voltage (*1)
Screw torque
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Items
Thermal resistance (1device)
Contact thermal resistance
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Thermal resistance characteristics
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Symbols
I
I
V
V
Cies
Coes
Cres
ton
tr
tr (i)
toff
tf
V
trr
Symbols
Rth(j-c)
Rth(c-f)
CES
GES
GE (th)
CE (sat)
F
Symbols
V
V
Ic
Ic pulse
-Ic
-Ic pulse
Pc
Tj
Tstg
V
Mounting (*2)
Terminals (*2)
CES
GES
iso
Conditions
V
V
V
V
I
V
V
f = 1MHz
V
I
V
R
I
I
Conditions
IGBT
FWD
with Thermal Compound (*3)
C
C
F
F
GE
CE
CE
GE
GE
CE
CC
GE
G
= 200A
= 200A
= 200A
= 200A
= 4.7Ω
= 0V, V
= 10V
= 0V, V
= 20V, I
= 15V
= 0V
= 600V
= ±15V
1
Conditions
Continuous
1ms
1ms
1 device
AC : 1min.
CE
GE
C
= ±20V
= 1200V
= 200mA
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Maximum ratings
min.
min.
5.5
-40 to +125
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Characteristics
Characteristics
1200
1500
2500
±20
300
200
600
400
200
400
150
3.5
4.5
24000
0.025
5000
4400
0.35
0.25
0.45
0.08
typ.
typ.
7.2
2.3
2.8
0.1
2.3
2.0
-
-
-
-
-
IGBT Modules
0.085
max.
max.
0.35
0.18
1.0
0.4
8.5
2.6
1.2
0.6
1.0
0.3
3.0
-
-
-
-
-
-
-
Units
N·m
°C
°C
W
V
V
A
V
Units
Units
°C/W
mA
µA
pF
µs
µs
V
V
V

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2MBI200SB-120-50 Summary of contents

Page 1

... IGBT MODULE (S series) 1200V / 200A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25° ...

Page 2

... Characteristics (Representative) Collector current vs. Collector-Emiiter voltage Tj= 25°C (typ.) 500 VGE= 20V 400 300 200 100 Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emiiter voltage VGE=15V (typ.) 500 Tj= 25°C 400 300 200 100 Collector - Emitter voltage : VCE [ V ] Capacitance vs. Collector-Emiiter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25° ...

Page 3

... Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg= 4.7Ω, Tj= 25°C 1000 toff 500 ton t r 100 100 Collector current : Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj= 25°C 5000 1000 500 100 Gate resistance : Rg [ Ω ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=± ...

Page 4

... Forward current vs. Forward on voltage (typ.) 500 400 300 200 100 Forward on voltage : Transient thermal resistance 1 0.1 0.05 0.01 1E-3 0 .001 0.01 Pulse width : Pw [ sec ] Tj=125°C Tj=25° FWD IGBT 0 Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=4.7Ω 500 Irr(125° ...

Page 5

... Outline Drawing ( Unit : mm ) Outline Drawings Equivalent circuit Equivalent Circuit Schematic MS5F 4921 ���������� IGBT Modules 3 8 ...

Page 6

... This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. ...

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