2MBI200SB-120-50 FUJI ELECTRIC, 2MBI200SB-120-50 Datasheet - Page 4

• Manufacturer Part Number: 2MBI200SB-120-50
• Description: IGBT, 2 PACK MOD, 1200V, 200A, M235
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI200SB-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 2.6V
• Power Dissipation Max: 1.5kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2MBI200SB-120
1E-3
500
400
300
200
100
0.01
0.05
0.1
0
1
0 .001
0
Forward current vs. Forward on voltage (typ.)
Transient thermal resistance
1
Forward on voltage : VF [ V ]
Pulse width : Pw [ sec ]
0.01
2
Tj=125°C
0.1
3
Tj=25°C
IGBT
FWD
4
1
4
4
500
100
10
0
trr(125°C)
Irr(25°C)
Irr(125°C)
trr(25°C)
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=4.7Ω
100
Forward current : IF [ A ]
200
IGBT Modules
300