2MBI200SB-120-50 FUJI ELECTRIC, 2MBI200SB-120-50 Datasheet - Page 2

• Manufacturer Part Number: 2MBI200SB-120-50
• Description: IGBT, 2 PACK MOD, 1200V, 200A, M235
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI200SB-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 2.6V
• Power Dissipation Max: 1.5kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2MBI200SB-120
Characteristics (Representative)
1 0 0 000
1 0
500
400
300
200
100
500
400
300
200
100
0 00
5000
1000
500
0
0
0
0
0
Collector current vs. Collector-Emiiter voltage
Collector current vs. Collector-Emiiter voltage
Capacitance vs. Collector-Emiiter voltage (typ.)
5
1
1
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
VGE=0V, f= 1MHz, Tj= 25°C
10
VGE=15V (typ.)
Tj= 25°C (typ.)
2
2
15
VGE= 20V
Tj= 25°C
20
3
3
15V
12V
25
Tj= 125°C
4
4
30
Cres
10V
Cies
Coes
8V
5
5
35
2
2
1000
500
400
300
200
100
800
600
400
200
1 0
0
8
6
4
2
0
0
0
5
0
Collector-Emiiter voltage vs. Gate-Emitter voltage
Collector current vs. Collector-Emiiter voltage
1
Collector - Emitter voltage : VCE [ V ]
500
10
Gate - Emitter voltage : VGE [ V ]
Vcc=600V, Ic=200A, Tj= 25°C
Dynamic Gate charge (typ.)
Gate charge : Qg [ nC ]
Tj= 125°C (typ.)
Tj= 25°C (typ.)
2
1000
15
3
VGE= 20V
1500
20
Ic= 400A
Ic= 200A
I c=100A
4
15V
IGBT Modules
10V
8V
12V
2000
25
5
25
20
15
10
5
0