2N5199 Vishay, 2N5199 Datasheet - Page 3

• Manufacturer Part Number: 2N5199
• Description: Transistor
• Manufacturer: Vishay

Specifications of 2N5199

• Power Dissipation Pd: 500mW
• Peak Reflow Compatible (260 C): No
• Transistor Polarity: N Channel
• Current Rating: 50mA
• Continuous Drain Current Id: 7mA
• Gate-source Breakdown Voltage: -50V
• Leaded Process Compatible: No
• Gate-source Cutoff Voltage: -4V
• Mounting Type: Through Hole
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Notes
a.
b.
c.
Document Number: 70252
S-04031—Rev. D, 04-Jun-01
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
Gate Reverse Current
Gate Operating Current
Gate-Source Voltage
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
Noise Figure
Matching
Differential Gate-Source Voltage
Gate-Source Voltage Differential
Change with Temperature
Saturation Drain Current Ratio
Transconductance Ratio
Differential Output Conductance
Differential Gate Current
Common Mode Rejection Ratio
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW v300 ms duty cycle v3%.
This parameter not registered with JEDEC.
Parameter
b
c
D | V
| V
| g
| I
Symbol
GS1
GS1
V
os1
G1
V
CMRR
(BR)GSS
I
I
DT
GS(off)
I
I
DSS2
V
C
C
DSS1
GSS
g
g
–I
DSS
g
g
NF
–V
g
g
e
I
–V
–g
GS
G
os
os
iss
rss
fs1
fs2
fs
fs
n
G2
GS2
os2
GS2
|
|
|
|
V
DG
V
V
V
DS
V
DS
DS
= 20 V, I
DG
V
V
V
V
V
V
= 20 V, V
f = 100 Hz, R
V
V
V
= 20 V, V
= 20 V, V
V
V
V
Test Conditions
I
V
DS
DS
DS
DS
DG
DG
DG
DG
G
GS
= 10 to 20 V, I
DS
DS
DS
DS
T
= –1 mA, V
A
= 20 V, I
= 20 V, I
= 20 V, I
= 20 V, I
= 20 V, I
= 20 V, I
= 20 V, I
= 20 V, I
= –30 V, V
= 20 V, V
= 20 V, V
= 20 V, V
= 20 V, I
= –55 to 125_C
D
f = 1 kHz
f = 1 kHz
= 200 mA , T
GS
GS
GS
= 0 V, f = 1 MHz
D
D
D
D
= 0 V, f = 1 kHz
= 0 V, f = 1 kHz
D
D
D
D
G
D
DS
GS
= 200 mA
= 200 mA
GS
GS
= 200 mA
= 200 mA
= 200 mA
= 200 mA
= 200 mA
= 200 mA
DS
= 10 MW
T
D
= 1 nA
T
A
= 0 V
A
= 0 V
= 0 V
= 0 V
= 200 mA
_
= 0 V
= 150_C
=125_C
A
= 125_C
2N5196/5197/5198/5199
Typ
–1.5
0.97
0.97
–57
–10
–20
–0.8
2.5
0.8
0.2
0.1
–2
–5
97
3
2
1
3
1
9
a
Min
–0.7
–0.2
0.95
0.95
–50
0.7
0.7
1
2N5198
Max
–3.8
–25
–50
–15
–15
Vishay Siliconix
1.6
0.5
–4
50
20
10
20
7
4
4
6
2
1
1
1
5
Limits
Min
–0.7
–0.2
0.95
0.95
–50
0.7
0.7
1
2N5199
Max
–3.8
–25
–50
–15
–15
1.6
0.5
–4
50
20
15
40
www.vishay.com
7
4
4
6
2
1
1
1
5
mV/_C
Unit
mA
mS
mS
mV
nV
pA
nA
pA
nA
mS
mS
pF
dB
mS
nA
dB
V
V
Hz
NQP
8-3