2N5199 Vishay, 2N5199 Datasheet - Page 5

• Manufacturer Part Number: 2N5199
• Description: Transistor
• Manufacturer: Vishay

Specifications of 2N5199

• Power Dissipation Pd: 500mW
• Peak Reflow Compatible (260 C): No
• Transistor Polarity: N Channel
• Current Rating: 50mA
• Continuous Drain Current Id: 7mA
• Gate-source Breakdown Voltage: -50V
• Leaded Process Compatible: No
• Gate-source Cutoff Voltage: -4V
• Mounting Type: Through Hole
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 70252
S-04031—Rev. D, 04-Jun-01
100
100
10
80
60
40
20
5
4
3
2
1
0
1
0
0.01
0.01
0
125_C
Assume V
A
R
V
Circuit Voltage Gain vs. Drain Current
V
L
GS(off)
V
DT
DT
Voltage Differential with Temperature
DG
+
V
+
A
A
GS(off)
–0.5
= 20 V
= 25 to 125_C
= –55 to 25_C
1 ) R
T
10 V
= –2 V
A
I
V
g
D
= –55_C
Transfer Characteristics
DD
fs
GS
= –3 V
R
= 15 V, V
I
I
D
D
L
– Gate-Source Voltage (V)
vs. Drain Current
L
g
– Drain Current (mA)
25_C
– Drain Current (mA)
os
–1.0
0.1
DS
0.1
= 5 V
–1.5
2N5199
2N5196
V
V
DS
GS(off)
–2.0
= 20 V
= –2 V
_
–2.5
1
1
100
130
120
100
110
800
600
400
200
1 k
10
90
80
1
0
0.01
0.01
0.01
V
T
2N5196/5197/5198/5199
A
DG
= 25_C
CMRR = 20 log
= 20 V
On-Resistance vs. Drain Current
Gate-Source Differential Voltage
Common Mode Rejection Ratio
DV
DG
5 – 10 V
I
I
I
= 10 – 20 V
D
D
D
vs. Drain Current
vs. Drain Current
– Drain Current (mA)
– Drain Current (mA)
– Drain Current (mA)
V
GS(off)
Vishay Siliconix
0.1
0.1
0.1
D
= –2 V
2N5199
2N5196
V
GS1
DV
V
DG
–
GS(off)
V
GS2
= –3 V
www.vishay.com
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