2N5199 Vishay, 2N5199 Datasheet - Page 6

• Manufacturer Part Number: 2N5199
• Description: Transistor
• Manufacturer: Vishay

Specifications of 2N5199

• Power Dissipation Pd: 500mW
• Peak Reflow Compatible (260 C): No
• Transistor Polarity: N Channel
• Current Rating: 50mA
• Continuous Drain Current Id: 7mA
• Gate-source Breakdown Voltage: -50V
• Leaded Process Compatible: No
• Gate-source Cutoff Voltage: -4V
• Mounting Type: Through Hole
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

2N5196/5197/5198/5199
Vishay Siliconix
www.vishay.com
8-6
2.5
2.0
1.5
1.0
0.5
10
20
16
12
8
6
4
2
0
8
4
0
0
0.01
10
0
Equivalent Input Noise Voltage vs. Frequency
Common-Source Forward Transconductance
V
GS(off)
f = 1 MHz
V
20 V
DS
Common-Source Input Capacitance
= 0 V
= –2 V
–4
100
V
vs. Gate-Source Voltage
GS
5 V
I
15 V
D
– Gate-Source Voltage (V)
vs. Drain Current
f – Frequency (Hz)
– Drain Current (mA)
I
D
V
@ 200 mA
GS
–8
= 0 V
0.1
1 k
25_C
–12
125_C
T
A
V
f = 1 kHz
= –55_C
DS
V
10 k
DS
= 20 V
–16
= 20 V
_
100 k
–20
1
800
600
400
200
2.5
2.0
1.5
1.0
0.5
1 k
5
4
3
2
1
0
0
0
0.01
0
0
V
On-Resistance and Output Conductance
GS(off)
f = 1 MHz
Output Conductance vs. Drain Current
V
20 V
Capacitance vs. Gate-Source Voltage
Common-Source Reverse Feedback
DS
V
vs. Gate-Source Cutoff Voltage
= 0 V
= –2 V
GS(off)
–4
–1
5 V
r
g
DS
os
V
GS
@ I
@ V
– Gate-Source Cutoff Voltage (V)
15 V
I
D
– Gate-Source Voltage (V)
D
– Drain Current (mA)
DS
25_C
= 100 mA, V
–2
–8
= 20 V, V
0.1
g
os
T
GS
–12
GS
A
–3
125_C
r
= –55_C
= 0 V, f = 1 kHz
DS
= 0 V
S-04031—Rev. D, 04-Jun-01
V
f = 1 kHz
Document Number: 70252
DS
= 20 V
–16
–4
–20
–5
1
10
8
6
4
2
0