2N5199 Vishay, 2N5199 Datasheet - Page 4

• Manufacturer Part Number: 2N5199
• Description: Transistor
• Manufacturer: Vishay

Specifications of 2N5199

• Power Dissipation Pd: 500mW
• Peak Reflow Compatible (260 C): No
• Transistor Polarity: N Channel
• Current Rating: 50mA
• Continuous Drain Current Id: 7mA
• Gate-source Breakdown Voltage: -50V
• Leaded Process Compatible: No
• Gate-source Cutoff Voltage: -4V
• Mounting Type: Through Hole
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

2N5196/5197/5198/5199
Vishay Siliconix
www.vishay.com
8-4
1.6
1.2
0.8
0.4
5
4
2
1
0
3
5
4
3
2
1
0
2
0
0
0
0
Drain Current and Transconductance
V
V
V
vs. Gate-Source Cutoff Voltage
GS(off)
0.2
GS(off)
GS(off)
–1
4
g
V
V
fs
Output Characteristics
DS
Output Characteristics
DS
– Gate-Source Cutoff Voltage (V)
= –2 V
= –2 V
– Drain-Source Voltage (V)
– Drain-Source Voltage (V)
I
g
f = 1 kHz
DSS
fs
0.4
@ V
–2
8
@ V
DG
DS
= 15 V, V
= 15 V, V
I
DSS
0.6
–3
12
V
GS
GS
= 0 V
GS
= 0 V
= 0 V
V
0.8
GS
–4
16
–0.2 V
–0.4 V
–0.6 V
–1.4 V
–1.6 V
= 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
–1.4 V
_
–5
20
1
2.2
1.4
3
2.6
1.8
1
–0.8 V
–1.0 V
–1.2 V
100 nA
100 pA
0.1 pA
10 nA
10 pA
1 nA
1 pA
2.5
2.0
1.5
1.0
0.5
5
4
3
2
1
0
0
0
0
0
T
A
T
= 25_C
V
A
GS(off)
I
= 125_C
GSS
V
0.2
10
GS(off)
4
V
V
@ 125_C
V
= –3 V
DS
DS
Output Characteristics
Output Characteristics
Gate Leakage Current
DG
= –3 V
– Drain-Source Voltage (V)
– Drain-Source Voltage (V)
– Drain-Gate Voltage (V)
200 mA
0.4
20
8
I
G
@ I
D
= 200 mA
30
0.6
12
S-04031—Rev. D, 04-Jun-01
Document Number: 70252
I
GSS
V
GS
@ 25_C
50 mA
V
= 0 V
0.8
40
16
GS
–0.3 V
–0.6 V
–0.9 V
–1.2 V
–1.5 V
–1.8 V
–2.1 V
–2.4 V
50 mA
= 0 V
–0.3 V
–0.6 V
–0.9 V
–1.2 V
–1.5 V
–1.8 V
–2.1 V
–2.4 V
50
20
1