SI5515CDC-T1-E3 Vishay, SI5515CDC-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI5515CDC-T1-E3
• Description: DUAL N/P CHANNEL MOSFET, 20V, 1206
• Manufacturer: Vishay

Specifications of SI5515CDC-T1-E3

• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 800mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68747
S10-0548-Rev. B, 08-Mar-10
100
0.1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
T
J
V
0.3
SD
= 150 °C
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
25
- Temperature (°C)
0.6
50
I
D
= 250 µA
75
T
J
= 25 °C
0.01
100
0.1
10
100
0.1
1
0.9
* V
Safe Operating Area, Junction-to-Ambient
Single Pulse
T
125
A
GS
Limited by R
= 25 °C
> minimum V
V
150
DS
1.2
- Drain-to-Source Voltage (V)
1
DS(on)
GS
*
at which R
BVDSS
Limited
10
DS(on)
0.06
0.05
0.04
0.03
0.02
0.01
0.00
40
30
20
10
0
10
0
is specified
-4
100 µs
1 ms
100 ms
1 s
10 s
DC
10 ms
On-Resistance vs. Gate-to-Source Voltage
10
-3
100
V
GS
2
10
- Gate-to-Source Voltage (V)
-2
Single Pulse Power
10
Time (s)
-1
4
Vishay Siliconix
1
Si5515CDC
T
T
10
I
D
J
J
www.vishay.com
= 25 °C
= 125 °C
= 6 A
6
100
1000
8
5