SI5515CDC-T1-E3 Vishay, SI5515CDC-T1-E3 Datasheet - Page 7

• Manufacturer Part Number: SI5515CDC-T1-E3
• Description: DUAL N/P CHANNEL MOSFET, 20V, 1206
• Manufacturer: Vishay

Specifications of SI5515CDC-T1-E3

• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 800mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68747
S10-0548-Rev. B, 08-Mar-10
0.01
0.01
0.1
0.1
1
1
10
10
-4
0.05
0.02
-4
0.2
0.1
Duty Cycle = 0.5
0.2
0.1
Duty Cycle = 0.5
Single Pulse
Single Pulse
10
0.02
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.05
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
10
-2
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
P
DM
-1
JM
- T
t
A
1
= P
Vishay Siliconix
t
2
DM
100
Si5515CDC
Z
thJA
thJA
t
t
1
2
(t)
= 90 °C/W
www.vishay.com
1000
1
7