SI5515CDC-T1-E3 Vishay, SI5515CDC-T1-E3 Datasheet - Page 9

• Manufacturer Part Number: SI5515CDC-T1-E3
• Description: DUAL N/P CHANNEL MOSFET, 20V, 1206
• Manufacturer: Vishay

Specifications of SI5515CDC-T1-E3

• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 800mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68747
S10-0548-Rev. B, 08-Mar-10
100
0.1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10
1
- 50
0.1
- 25
Source-Drain Diode Forward Voltage
0.3
V
T
J
SD
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.5
J
25
- Temperature (°C)
0.7
50
I
D
= 250 µA
75
0.9
0.01
T
100
0.1
J
10
0.1
= 25 °C
1
100
* V
Single Pulse
1.1
T
Safe Operating Area, Junction-to-Case
125
A
GS
Limited by R
= 25 °C
> minimum V
V
DS
150
1.3
- Drain-to-Source Voltage (V)
1
DS(on)
GS
*
at which R
BVDSS
Limited
10
DS(on)
0.18
0.15
0.12
0.09
0.06
0.03
0.00
40
30
20
10
0
10
is specified
0
100 µs
1 ms
10 ms
100 ms
1 s, 10 s
DC
-4
On-Resistance vs. Gate-to-Source Voltage
10
-3
100
V
GS
2
10
Single Pulse Power
- Gate-to-Source Voltage (V)
-2
10
Time (s)
-1
4
Vishay Siliconix
1
Si5515CDC
I
T
D
10
J
= - 3.1 A
www.vishay.com
T
= 25 °C
6
J
= 125 °C
100
1000
8
9