SI5515CDC-T1-E3 Vishay, SI5515CDC-T1-E3 Datasheet - Page 8

• Manufacturer Part Number: SI5515CDC-T1-E3
• Description: DUAL N/P CHANNEL MOSFET, 20V, 1206
• Manufacturer: Vishay

Specifications of SI5515CDC-T1-E3

• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 800mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si5515CDC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.20
0.16
0.12
0.08
0.04
0.00
10
On-Resistance vs. Drain Current and Gate Voltage
5
4
3
2
1
0
8
6
4
2
0
0
0
0
I
D
V
1
GS
= 3.1 A
= 1.8 V
2
1
V
DS
2
Output Characteristics
Q
V
g
- Drain-to-Source Voltage (V)
GS
I
- Total Gate Charge (nC)
D
= 5 V thru 2 V
- Drain Current (A)
Gate Charge
3
V
4
2
DS
= 10 V
4
V
GS
= 2.5 V
6
V
3
DS
5
= 16 V
V
V
V
GS
GS
GS
6
8
= 1.5 V
= 1 V
4
= 4.5 V
7
10
8
5
900
750
600
450
300
150
1.5
1.3
1.1
0.9
0.7
3.0
2.4
1.8
1.2
0.6
0.0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
rss
- 25
C
0.4
oss
4
V
V
DS
GS
T
Transfer Characteristics
0
T
J
C
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
iss
= 125 °C
V
T
25
Capacitance
C
GS
0.8
8
= 25 °C
= - 2.5 V, I
S10-0548-Rev. B, 08-Mar-10
50
V
GS
Document Number: 68747
1.2
= - 4.5 V, I
12
75
D
T
= - 2.8 A
C
= - 55 °C
100
D
1.6
16
= - 3.1 A
125
150
2.0
20