SI9435BDY-T1-GE3 Vishay, SI9435BDY-T1-GE3 Datasheet - Page 2

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SI9435BDY-T1-GE3

Manufacturer Part Number
SI9435BDY-T1-GE3
Description
P CH MOSFET
Manufacturer
Vishay
Datasheet

Specifications of SI9435BDY-T1-GE3

Transistor Polarity
P Channel
Continuous Drain Current Id
-4.1A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
33mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-3V
Power Dissipation Pd
1.3W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI9435BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI9435BDY-T1-GE3
Quantity:
70 000
Si9435BDY
Vishay Siliconix
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
a
b
b
b
J
= 25 °C, unless otherwise noted
b
Symbol
R
V
I
t
t
I
I
DS(on)
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
R
t
t
t
SD
rr
fs
gs
gd
r
f
g
g
V
DS
V
I
D
DS
= - 15 V, V
≅ - 1 A, V
I
F
V
= - 30 V, V
V
V
V
V
V
V
V
V
= - 1.2 A, dI/dt = 100 A/µs
DS
DS
GS
DS
I
GS
DS
DS
V
S
DD
DS
GS
= - 2.3 A, V
Test Conditions
≤ - 10 V, V
≤ - 5 V, V
= V
= - 4.5 V, I
= - 10 V, I
= - 15 V, I
= 0 V, V
= - 30 V, V
= - 15 V, R
= - 6 V, I
GEN
GS
GS
GS
, I
= - 10 V, I
= - 10 V, R
D
GS
= 0 V, T
GS
= - 250 µA
GS
D
D
D
D
GS
GS
L
= ± 20 V
= - 5.7 A
= - 5.7 A
= - 4.5 V
= - 5 A
= - 4.4 A
= - 10 V
= 15 Ω
= 0 V
= 0 V
J
D
= 70 °C
g
= - 3.5 A
= 6 Ω
Min.
- 1.0
- 20
- 5
Typ.
0.033
0.043
0.056
- 0.8
2.3
4.5
8.8
13
16
14
14
42
30
30
S09-0870-Rev. D, 18-May-09
a
Document Number: 72245
± 100
0.042
0.055
0.070
Max.
- 3.0
- 1.1
- 1
- 5
24
25
25
70
50
60
Unit
nA
µA
nC
ns
Ω
Ω
V
A
S
V

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