SI9435BDY-T1-GE3 Vishay, SI9435BDY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI9435BDY-T1-GE3
• Description: P CH MOSFET
• Manufacturer: Vishay

Specifications of SI9435BDY-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -4.1A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 33mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Power Dissipation Pd: 1.3W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72245
S09-0870-Rev. D, 18-May-09
V
GS
0.15
0.12
0.09
0.06
0.03
0.00
= 10 V thru 6 V
10
30
25
20
15
10
8
6
4
2
0
5
0
0.0
0
0
V
I
On-Resistance vs. Drain Current
D
3.2
4
DS
1
= 3.5 A
V
V
DS
= 15 V
GS
Q
Output Characteristics
- Drain-to-Source Voltage (V)
g
I
= 4.5 V
D
- Total Gate Charge (nC)
- Drain Current (A)
6.4
Gate Charge
8
2
5 V
12
9.6
3
V
4 V
V
GS
3 V
GS
= 10 V
= 6 V
12.8
16
4
20
16.0
5
1100
880
660
440
220
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
0
5
0
- 50
0
0
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
C
= 5.7 A
rss
5
= 10 V
1
V
T
V
DS
0
Transfer Characteristics
J
GS
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
10
25
Capacitance
25 °C
2
T
C
C
C
50
= 125 °C
15
oss
iss
Vishay Siliconix
Si9435BDY
3
75
20
- 55 °C
100
www.vishay.com
4
25
125
150
30
5
3