SI9435BDY-T1-GE3 Vishay, SI9435BDY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI9435BDY-T1-GE3
• Description: P CH MOSFET
• Manufacturer: Vishay

Specifications of SI9435BDY-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -4.1A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 33mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Power Dissipation Pd: 1.3W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72245.
Document Number: 72245
S09-0870-Rev. D, 18-May-09
0.01
0.01
0.1
0.1
2
1
2
1
10 -
10 -
0.02
0.05
4
4
Duty Cycle = 0.5
0.2
0.1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Single Pulse
10 -
3
10 -
3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10 -
2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10 -
2
10 -
1
10 -
1
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
-
T
t
1
1
A
= P
Vishay Siliconix
t
2
DM
Si9435BDY
Z
thJA
100
thJA
t
t
1
2
(t)
= 70 °C/W
www.vishay.com
600
10
5