SQM110N04-04-GE3 Vishay, SQM110N04-04-GE3 Datasheet
SQM110N04-04-GE3
Specifications of SQM110N04-04-GE3
Related parts for SQM110N04-04-GE3
SQM110N04-04-GE3 Summary of contents
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... S10-2635-Rev. B, 22-Nov-10 Automotive FEATURES • Halogen-free According to IEC 61249-2-21 40 Definition 0.0035 • TrenchFET 120 • Package with Low Thermal Resistance Single • AEC-Q101 Qualified D • Compliant to RoHS Directive 2002/95/ N-Channel MOSFET TO-263 SQM110N04-04-GE3 = 25 °C, unless otherwise noted) C SYMBOL ° 125 ° ...
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... SQM110N04-04 Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance b Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... C rss Drain-to-Source Voltage (V) DS Capacitance Document Number: 68830 S10-2635-Rev. B, 22-Nov- °C, unless otherwise noted) A 120 100 0.005 0.004 0.003 0.002 0.001 SQM110N04-04 Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 100 I - Drain Current (A) D On-Resistance vs. Drain Current I = 110 A ...
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... SQM110N04-04 Vishay Siliconix TYPICAL CHARACTERISTICS ( 1.4 1.1 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0.05 0.04 0.03 0.02 0. ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage www.vishay.com °C, unless otherwise noted) A 100 0.1 0.01 0.001 100 125 150 175 0.6 0 ...
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... Limited DS(on) I Limited 0 °C C Single Pulse BVDSS Limited 0.01 0.01 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient SQM110N04-04 Vishay Siliconix 100 µ 100 ms 100 is specified 10 100 www.vishay.com 1000 5 ...
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... SQM110N04-04 Vishay Siliconix THERMAL RATINGS ( °C, unless otherwise noted Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" ...
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