TN0200K-T1-E3 Vishay, TN0200K-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: TN0200K-T1-E3
• Description: MOSFET Transistor
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of TN0200K-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 730mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 730mA
• Vgs(th) (max) @ Id: 1V @ 50µA
• Gate Charge (qg) @ Vgs: 2nC @ 4.5V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.4 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.73 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: TN0200K-T1-E3TR

TN0200K
Vishay Siliconix
Notes:
a. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall TIme
b
4.0
3.2
2.4
1.6
0.8
0.0
0.0
0.4
a
a
V
DS
Output Characteristics
a
– Drain-to-Source Voltage (V)
a
A
0.8
= 25 °C, unless otherwise noted
1.2
V
Symbol
V
r
V
(BR)DSS
I
DS(on)
t
t
I
I
V
GS(th)
D(on)
Q
Q
d(on)
d(off)
GS
GSS
DSS
g
Q
R
t
SD
t
gd
fs
gs
r
f
g
g
= 5 thru 2.5 V
1.6
1.5 V
2 V
1 V
New Product
2.0
V
I
V
D
V
V
V
V
V
V
V
DS
V
I
DS
V
DS
DS
GS
GS
S
≅ 0.6 A, V
DS
DD
DS
GS
DS
Test Conditions
= 0.3 A, V
= 0 V, V
= 10 V, V
≥ 5 V, V
≥ 5 V, V
= V
= 20 V, V
= 4.5 V, I
= 2.5 V, I
= 10 V, R
= 0 V, I
= 5 V, I
I
R
D
GS
g
= 0.6 A
= 6 Ω
, I
GS
GEN
D
GS
GS
D
D
GS
GS
D
D
GS
L
= 10 µA
= ± 4.5 V
= 0.6 A
= 50 µA
= 4.5 V
= 2.5 V
= 0.6 A
= 0.6 A
= 16 Ω
= 4.5 V
= 0 V
= 4.5 V
= 0 V
T
4
3
2
1
0
J
0.0
= 55 °C
0.5
V
GS
Transfer Characteristics
– Gate-to-Source Voltage (V)
0.45
Min
1.0
2.5
1.5
20
T
J
25 °C
= - 55 °C
1.5
S-71198–Rev. B, 18-Jun-07
Limits
1400
0.25
Document Number: 72678
Typ
190
300
105
0.6
0.2
2.2
0.8
17
20
55
30
2.0
2000
Max
125 °C
1.0
± 5
0.1
0.4
0.5
1.2
10
25
30
85
45
2.5
Unit
µA
pC
ns
Ω
Ω
V
A
S
V
3.0