TN0200K-T1-E3 Vishay, TN0200K-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: TN0200K-T1-E3
• Description: MOSFET Transistor
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of TN0200K-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 730mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 730mA
• Vgs(th) (max) @ Id: 1V @ 50µA
• Gate Charge (qg) @ Vgs: 2nC @ 4.5V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.4 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.73 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: TN0200K-T1-E3TR

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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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Document Number: 91000
www.vishay.com
Revision: 18-Jul-08
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