TN0200K-T1-E3 Vishay, TN0200K-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: TN0200K-T1-E3
• Description: MOSFET Transistor
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of TN0200K-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 730mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 730mA
• Vgs(th) (max) @ Id: 1V @ 50µA
• Gate Charge (qg) @ Vgs: 2nC @ 4.5V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.4 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.73 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: TN0200K-T1-E3TR

TN0200K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72678.
www.vishay.com
4
- 0.0
- 0.1
- 0.2
- 0.3
- 0.4
0.2
0.1
0.01
5
4
3
2
1
0
- 50
0.01
0.1
2
1
Single Pulse Power, Junction-to-Ambient
10
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0
Threshold Voltage
T
J
– Temperature ( C)
25
Time (sec)
10
1
Single Pulse
-3
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient
50
I
D
= 50 µA
10
75
°
100
10
-2
100
125
New Product
Square Wave Pulse Duration (sec)
150
600
10
-1
100000
10000
0.001
1000
0.001
0.01
100
0.01
0.1
10
0.1
10
1
1
1
0.1
0
*r
*V
DS(on)
Gate Current vs. Gate-Source Voltage
GS
T
Limited
Single Pulse
I
J
D(on)
T
= 150 °C
A
Limited
V
= 25 °C
2
minimum V
DS
V
GS
Safe Operating Area
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
10
1
T
4
BV
J
GS
= 25 °C
DSS
at which r
S-71198–Rev. B, 18-Jun-07
Document Number: 72678
Limited
6
DS(on)
100
10
is specified
I
DM
8
1 ms
10 ms
100 ms
1 s
10 s
dc
Limited
600
100
10