BUK663R7-75C NXP Semiconductors, BUK663R7-75C Datasheet

MOSFET,N CH,75V,120A,SOT404

BUK663R7-75C

Manufacturer Part Number
BUK663R7-75C
Description
MOSFET,N CH,75V,120A,SOT404
Manufacturer
NXP Semiconductors
Datasheet
1.BUK663R7-75C118.pdf (14 pages)

Specifications of BUK663R7-75C

Transistor Polarity
N Channel
Drain Source Voltage Vds
75V
On Resistance Rds(on)
3.4mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
16V
Operating Temperature Range
-55°C To +175°C
Transistor Case
RoHS Compliant
Transistor Case Style
D2-PAK
Rohs Compliant
Yes
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
Table 1.
[1]
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
BUK663R7-75C
N-channel TrenchMOS FET
Rev. 2 — 15 September 2010
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Continuous current is limited by package.
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
non-repetitive
drain-source
avalanche energy
Conditions
T
V
see
T
V
T
see
I
R
T
D
j
mb
j
j(init)
GS
GS
GS
≥ 25 °C; T
= 25 °C; see
= 120 A; V
Figure 1
Figure 12
= 25 °C; see
= 10 V; T
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
j
D
sup
≤ 175 °C
mb
GS
= 25 A;
Figure
≤ 75 V;
= 25 °C;
= 10 V;
Figure 2
11;
Suitable for thermally demanding
environments due to 175 °C rating
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
[1]
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
3.4
-
Max Unit
75
120
306
4
523
V
A
W
mΩ
mJ

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BUK663R7-75C Summary of contents

Page 1

... BUK663R7-75C N-channel TrenchMOS FET Rev. 2 — 15 September 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...

Page 2

... Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2010 BUK663R7-75C N-channel TrenchMOS FET Graphic symbol mbb076 Version SOT404 © NXP B.V. 2010. All rights reserved ...

Page 3

... Figure °C mb ≤ 10 µs; pulsed ° ≤ 120 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2010 BUK663R7-75C N-channel TrenchMOS FET Min Max - 75 [1] -16 16 [2] -20 20 [3] Figure 1 - 120 [3] Figure 1 - 120 - 713 - ...

Page 4

... Product data sheet 003aae419 P der (%) 150 200 T (°C) mb Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2010 BUK663R7-75C N-channel TrenchMOS FET 120 100 150 Normalized total power dissipation as a function of mounting base temperature =10 μ 100 μ 100 ...

Page 5

... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK663R7-75C Product data sheet Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2010 BUK663R7-75C N-channel TrenchMOS FET Min Typ Max - - 0.49 003aae375 δ = ...

Page 6

... Ω R G(ext) from upper edge of drain mounting base to centre of die °C j from source lead to source bond pad °C j All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2010 BUK663R7-75C N-channel TrenchMOS FET Min Typ Max Unit 1.8 2.3 2.8 ...

Page 7

... A/µ 003aae420 5.0 4.5 4.0 3.8 3.6 3.4 1 (V) DS Fig 6. 003aae424 (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2010 BUK663R7-75C N-channel TrenchMOS FET Min Typ - 0 218 125 I D (A) 100 75 = 175 ° Transfer characteristics: drain current as a function of gate-source voltage ...

Page 8

... Fig 10. Gate-source threshold voltage as a function of 03aa28 R DSon (mΩ) 120 180 T (°C) j Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2010 BUK663R7-75C N-channel TrenchMOS FET 4 3 max @1mA 2 typ @1mA min @2.5mA ...

Page 9

... Fig 14. Gate-source voltage as a function of gate 003aae451 (A) C iss C oss C rss (V) DS Fig 16. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2010 BUK663R7-75C N-channel TrenchMOS FET (V) 8 14V 100 150 charge; typical values ...

Page 10

... H D max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2010 BUK663R7-75C N-channel TrenchMOS FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2010. All rights reserved. ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK663R7-75C v.2 20100915 • Modifications: Status changed from objective to product data sheet. BUK663R7-75C v.1 20100706 BUK663R7-75C Product data sheet Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. ...

Page 12

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2010 BUK663R7-75C N-channel TrenchMOS FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 15 September 2010 BUK663R7-75C N-channel TrenchMOS FET Trademarks © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 15 September 2010 Document identifier: BUK663R7-75C ...

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