BUK663R7-75C NXP Semiconductors, BUK663R7-75C Datasheet - Page 8

• Manufacturer Part Number: BUK663R7-75C
• Description: MOSFET,N CH,75V,120A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK663R7-75C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 3.4mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK663R7-75C
Product data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
(A)
I
D
10
10
10
10
10
10
a
2.4
1.8
1.2
0.6
-1
-2
-3
-4
-5
-6
0
−60
gate-source voltage
factor as a function of junction temperature
Sub-threshold drain current as a function of
0
0
1
min
60
2
typ
max
120
3
All information provided in this document is subject to legal disclaimers.
003aad806
V
T
GS
j
(°C)
03aa28
(V)
Rev. 2 — 15 September 2010
180
4
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
(mΩ)
R
V
DSon
GS(th)
(V)
15
12
4
3
2
1
0
9
6
3
0
-60
junction temperature
of drain current; typical values
0
V
GS
(V) = 3.6
50
0
3.8
BUK663R7-75C
max @1mA
min @2.5mA
typ @1mA
100
N-channel TrenchMOS FET
60
4.0
120
150
© NXP B.V. 2010. All rights reserved.
003aae542
T
003aae423
I
D
j
(°C)
(A)
4.5
5.0
6.0
10
200
180
8 of 14