BUK663R7-75C NXP Semiconductors, BUK663R7-75C Datasheet - Page 4
![MOSFET,N CH,75V,120A,SOT404](/photos/41/50/415039/sot404_3d_sml.gif)
BUK663R7-75C
Manufacturer Part Number
BUK663R7-75C
Description
MOSFET,N CH,75V,120A,SOT404
Manufacturer
NXP Semiconductors
Datasheet
1.BUK663R7-75C118.pdf
(14 pages)
Specifications of BUK663R7-75C
Transistor Polarity
N Channel
Drain Source Voltage Vds
75V
On Resistance Rds(on)
3.4mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
16V
Operating Temperature Range
-55°C To +175°C
Transistor Case
RoHS Compliant
Transistor Case Style
D2-PAK
Rohs Compliant
Yes
NXP Semiconductors
BUK663R7-75C
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
(A)
I
10
D
10
10
200
150
100
10
50
-1
3
2
1
0
10
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
(1)
100
Limit R
1
DSon
150
= V
All information provided in this document is subject to legal disclaimers.
T
003aae419
DS
mb
/ I
(°C)
D
Rev. 2 — 15 September 2010
200
DC
10
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
50
10
BUK663R7-75C
2
100 μ s
1 ms
10 ms
100 ms
t
p
=10 μ s
100
N-channel TrenchMOS FET
V
DS
150
(V)
© NXP B.V. 2010. All rights reserved.
T
003aae421
mb
03aa16
(°C)
10
200
3
4 of 14