BUK664R4-55C NXP Semiconductors, BUK664R4-55C Datasheet - Page 10

• Manufacturer Part Number: BUK664R4-55C
• Description: MOSFET,N CH,55V,97A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK664R4-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 4.2mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK664R4-55C
Product data sheet
Fig 15. Normalized drain-source on-state resistance
Fig 17. Gate charge waveform definitions
a
2.5
1.5
0.5
2
1
0
-60
factor as a function of junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
I
Q
D
GS
Q
GS2
60
Q
G(tot)
Q
GD
120
All information provided in this document is subject to legal disclaimers.
003aaa508
003aad803
T
j
(°C)
Rev. 03 — 21 December 2010
180
Fig 16. Gate-source voltage as a function of gate
Fig 18. Gate-source voltage as a function of gate
V
(V)
GS
V
(V)
N-channel TrenchMOS intermediate level FET
10
10
GS
8
6
4
2
0
8
6
4
2
0
charge; typical values
charge; typical values
T
0
0
j
= 25°C; I
V
V
DS
DS
10
= 6V
D
= 14 V
15V
= 25 A
50
BUK664R4-55C
20
V
DS
100
24V
= 44 V
30
Q
© NXP B.V. 2010. All rights reserved.
Q
G
003aae713
003aaf019
G
(nC)
(nC)
150
40
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