BUK664R4-55C NXP Semiconductors, BUK664R4-55C Datasheet - Page 8

• Manufacturer Part Number: BUK664R4-55C
• Description: MOSFET,N CH,55V,97A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK664R4-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 4.2mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK664R4-55C
Product data sheet
Fig 7.
Fig 9.
(A)
(A)
I
I
D
10
10
10
10
10
10
D
160
120
80
40
-1
-2
-3
-4
-5
-6
0
function of gate-source voltage; typical values
gate-source voltage
Transfer characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
1
1
T
j
= 175 °C
min
2
2
typ
3
max
T
j
= 25 °C
3
All information provided in this document is subject to legal disclaimers.
4
003aad806
V
003aae854
V
GS
GS
(V)
(V)
Rev. 03 — 21 December 2010
4
5
Fig 8.
Fig 10. Gate-source threshold voltage as a function of
R
(mΩ)
V
DSon
GS(th)
(V)
N-channel TrenchMOS intermediate level FET
20
15
10
4
3
2
1
0
5
0
-60
of gate-source voltage; typical values
junction temperature
Drain-source on-state resistance as a function
0
0
5
BUK664R4-55C
max @1mA
min @2.5mA
typ @1mA
10
60
120
15
© NXP B.V. 2010. All rights reserved.
V
003aae857
003aae542
T
GS
j
(°C)
(V)
180
20
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