BUK664R4-55C NXP Semiconductors, BUK664R4-55C Datasheet - Page 11

• Manufacturer Part Number: BUK664R4-55C
• Description: MOSFET,N CH,55V,97A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK664R4-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 4.2mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK664R4-55C
Product data sheet
Fig 19. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
5
4
3
2
10
as a function of drain-source voltage; typical
values
V
−2
GS
= 0 V; f = 1 MHz
10
−1
1
10
All information provided in this document is subject to legal disclaimers.
V
003aae714
DS
C
C
C
oss
iss
(V)
rss
Rev. 03 — 21 December 2010
10
2
Fig 20. Source (diode forward) current as a function of
(A)
I
S
160
120
N-channel TrenchMOS intermediate level FET
80
40
0
source-drain (diode forward) voltage; typical
values
V
0
GS
= 0 V
0.4
T
j
BUK664R4-55C
= 175 °C
0.8
© NXP B.V. 2010. All rights reserved.
V
SD
T
003aae716
j
= 25 °C
(V)
1.2
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